超短脉冲激光硅材料表面改性
文献类型:学位论文
作者 | 柏锋 |
学位类别 | 硕士 |
答辩日期 | 2016 |
授予单位 | 中国科学院上海光学精密机械研究所 |
导师 | 赵全忠 |
关键词 | 超短脉冲激光 退火 着色 脉冲前沿倾斜 |
其他题名 | Ultrafast laser induced surface modification of Silicon |
中文摘要 | 由于具有超短脉冲宽度和超高脉冲峰值功率,超短脉冲激光在材料表面改性技术中具有独特的优势。近几年人们利用超短脉冲激光表面改性技术获得了许多新功能材料,如黑硅、超疏水材料、超亲水材料和微非晶体叠层材料等功能材料。超短脉冲激光表面改性主要有两种方法,一种是超短脉冲激光退火,另外一种是超短脉冲激光在材料表面诱导出周期性结构。超短脉冲激光退火改变原子间的结构,使材料的晶态改变,同时减少缺陷。许多材料在不同晶态下光电学性能有很大的差异,因此超短脉冲激光退火在高效太阳能电池、相变存储器、新材料的研发等方面的有着潜在应用前景。超短脉冲激光在材料表面诱导出表面周期性结构,改变材料表面形貌的结构。当材料表面出现纳米结构时,会导致许多新光电性能的出现,比如纳米多孔硅的发光特性,黑硅太赫兹发射特性。虽然超短脉冲激光退火与诱导表面周期性结构的研究已经被广泛研究,但是仍然有许多的问题需要解决。 本论文的目的有两个,第一个是希望通过改变飞秒激光的偏振方向来实现对退火的调控。本文通过退火后样品的拉曼光谱和X射线衍射谱来计算出飞秒激光的非晶化率,并以此来衡量退火结果。另一个是研究飞秒激光诱导表面周期性结构在硅材料着色中的应用。本文的工作以及所取得的主要成果分为如下: 1、利用飞秒激光直写方法成功实现硅材料从晶态到非晶态的转变。通过改变入射飞秒激光的能量密度,研究了能量密度对非晶化率的影响。 2、通过改变飞秒激光的偏振方向成功的实现了对退火的调控。 3、通过排除法我们确认飞秒激光退火偏振依赖特性的原因是飞秒激光脉冲存在前沿倾斜。另一方面,线偏振的飞秒激光相对于圆偏振的飞秒激光能够在材料表面诱导出条纹结构,这种条纹结构加剧了这种偏振依赖特性。 4、利用飞秒激光成功在硅材料表面诱导出纳米条纹结构,并在硅材料表面实现了着色。研究了光斑重叠率对表面着色的影响,并且给出了着色的参数窗口。 |
英文摘要 | Owing to ultrafast pulse duration and ultrahigh pulse peak power, ultrafast pulse laser has a unique advantage in material surface modification technologies. In recent years, people use ultrafast pulse laser surface modification technology to obtain a number of new functional materials, such as black silicon, super-hydrophobic material, super-hydrophilic material and a micromorph structure materials. Ultrafast pulse laser surface modification has two ways, one is an ultrafast pulse laser annealing, the other is an ultrafast pulse laser induced periodic surface structure. Ultrafast pulse laser annealing changes the structure of atoms, leading to the change of crystalline state and at the same time reducing the defects. For many materials, different crystalline state have different photoelectric properties, and therefore the ultrafast pulse laser annealing has a potential application in high efficiency solar cells, the phase change memory, research and development of new materials, and other aspects. Ultrafast pulse laser induced periodic surface structure on the material changes the surface morphology of the structure. When the materials have some nanostructures on its surface, it will lead to many of the new optoelectronic properties, such as light-emitting properties of nano-porous silicon, black silicon terahertz emission characteristics. Although the study of ultrafast pulse laser annealing and induces periodic surface structure have been studied extensively, but there are many problems to be solved. The purposes of this paper are two. The first one is that by changing the polarization direction of the femtosecond to tune the annealing result. Through the Raman and X-ray diffraction spectra of the annealed samples, we calculate the fraction of the amorphous silicon which is used to characterize the results of annealing. The other is the study of femtosecond laser induced surface structures applying in the colorization of silicon material. The main work of this paper and the results achieved divided as follows: 1、Using femtosecond laser direct writing method, we successfully changed crystalline silicon into amorphous silicon. By changing the energy density of the incident femtosecond laser, the impact of the energy density of the femtosecond laser on the fraction of the amorphous silicon was studied. 2、By changing the polarization direction of the femtosecond, we successfully tuned the annealing result. 3、Through a process of elimination we confirm that these polarization-dependent amorphization can be attributed to the pulse front tilt of the employed femtosecond laser system. The linearly polarized femtosecond laser can induce nano-periodic ripples, while circularly polarized femtosecond laser cannot. this ripples structure exacerbated these polarization-dependent amorphization. We successfully induced the periodic nano-ripples on the surface of the silicon, and the surface of the silicon was colorized. The impact of the overlapping on colorization was studied, and the colorization parameter window was obtained. |
语种 | 中文 |
源URL | [http://ir.siom.ac.cn/handle/181231/17024] ![]() |
专题 | 上海光学精密机械研究所_学位论文 |
推荐引用方式 GB/T 7714 | 柏锋. 超短脉冲激光硅材料表面改性[D]. 中国科学院上海光学精密机械研究所. 2016. |
入库方式: OAI收割
来源:上海光学精密机械研究所
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