The characteristic parameters of initiating defects in HfO2/SiO2 high-reflector multilayer thin film at wavelength of 1064 nm
文献类型:期刊论文
作者 | Li, Xiao; Li, Baohe; Shao, Jianda |
刊名 | eur. phys. j.-appl. phys
![]() |
出版日期 | 2014 |
卷号 | 67期号:3页码:30301 |
关键词 | LASER-INDUCED DAMAGE OPTICAL COATINGS THRESHOLD SURFACE MECHANISM GLASSES SINGLE ONSET |
通讯作者 | li, x (reprint author), beijing technol & business univ, sch sci, beijing 100048, peoples r china. |
英文摘要 | the characteristic parameters of initiating defects in hfo2/sio2 high-reflector film at wavelength of 1064 nm are investigated through the combined application of laser-conditioning process and the multi-spot damage threshold test. the laser damage tests before and after laser-conditioning are carried out within three different spot diameters. the damage threshold and the density are considered to characterize the initiating defects which are shown to be susceptible to laser damage. these characteristic parameters are obtained through fitting the damage data with the spot size effect. the influence of laser-conditioning effect on the initiating defects is analyzed. the initiating defects are specified by a gaussian distribution after laser-conditioning. it is discussed the essential roles of the initiating defects to the damage threshold of the film. the investigation on characteristic parameters of initiating defects has potential to be applied in the mechanisms of laser induced damage and laser-conditioning, as well as in the direction the preparation of the films. |
收录类别 | SCI |
语种 | 英语 |
版本 | 出版稿 |
源URL | [http://ir.siom.ac.cn/handle/181231/13091] ![]() |
专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
作者单位 | 1.[Li, Xiao 2.Li, Baohe] Beijing Technol & Business Univ, Sch Sci, Beijing 100048, Peoples R China 3.[Shao, Jianda] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China |
推荐引用方式 GB/T 7714 | Li, Xiao,Li, Baohe,Shao, Jianda. The characteristic parameters of initiating defects in HfO2/SiO2 high-reflector multilayer thin film at wavelength of 1064 nm[J]. eur. phys. j.-appl. phys,2014,67(3):30301. |
APA | Li, Xiao,Li, Baohe,&Shao, Jianda.(2014).The characteristic parameters of initiating defects in HfO2/SiO2 high-reflector multilayer thin film at wavelength of 1064 nm.eur. phys. j.-appl. phys,67(3),30301. |
MLA | Li, Xiao,et al."The characteristic parameters of initiating defects in HfO2/SiO2 high-reflector multilayer thin film at wavelength of 1064 nm".eur. phys. j.-appl. phys 67.3(2014):30301. |
入库方式: OAI收割
来源:上海光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。