中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The characteristic parameters of initiating defects in HfO2/SiO2 high-reflector multilayer thin film at wavelength of 1064 nm

文献类型:期刊论文

作者Li, Xiao; Li, Baohe; Shao, Jianda
刊名eur. phys. j.-appl. phys
出版日期2014
卷号67期号:3页码:30301
关键词LASER-INDUCED DAMAGE OPTICAL COATINGS THRESHOLD SURFACE MECHANISM GLASSES SINGLE ONSET
通讯作者li, x (reprint author), beijing technol & business univ, sch sci, beijing 100048, peoples r china.
英文摘要the characteristic parameters of initiating defects in hfo2/sio2 high-reflector film at wavelength of 1064 nm are investigated through the combined application of laser-conditioning process and the multi-spot damage threshold test. the laser damage tests before and after laser-conditioning are carried out within three different spot diameters. the damage threshold and the density are considered to characterize the initiating defects which are shown to be susceptible to laser damage. these characteristic parameters are obtained through fitting the damage data with the spot size effect. the influence of laser-conditioning effect on the initiating defects is analyzed. the initiating defects are specified by a gaussian distribution after laser-conditioning. it is discussed the essential roles of the initiating defects to the damage threshold of the film. the investigation on characteristic parameters of initiating defects has potential to be applied in the mechanisms of laser induced damage and laser-conditioning, as well as in the direction the preparation of the films.
收录类别SCI
语种英语
版本出版稿
源URL[http://ir.siom.ac.cn/handle/181231/13091]  
专题上海光学精密机械研究所_中科院强激光材料重点实验室
作者单位1.[Li, Xiao
2.Li, Baohe] Beijing Technol & Business Univ, Sch Sci, Beijing 100048, Peoples R China
3.[Shao, Jianda] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China
推荐引用方式
GB/T 7714
Li, Xiao,Li, Baohe,Shao, Jianda. The characteristic parameters of initiating defects in HfO2/SiO2 high-reflector multilayer thin film at wavelength of 1064 nm[J]. eur. phys. j.-appl. phys,2014,67(3):30301.
APA Li, Xiao,Li, Baohe,&Shao, Jianda.(2014).The characteristic parameters of initiating defects in HfO2/SiO2 high-reflector multilayer thin film at wavelength of 1064 nm.eur. phys. j.-appl. phys,67(3),30301.
MLA Li, Xiao,et al."The characteristic parameters of initiating defects in HfO2/SiO2 high-reflector multilayer thin film at wavelength of 1064 nm".eur. phys. j.-appl. phys 67.3(2014):30301.

入库方式: OAI收割

来源:上海光学精密机械研究所

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