Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Du, Xuejian; Mi, Wei; Luan, Caina; Li, Zhao; Xia, Changtai; Ma, Jin |
| 刊名 | j. cryst. growth
 |
| 出版日期 | 2014 |
| 卷号 | 404页码:75 |
| 关键词 | X-ray diffraction Metal-organic chemical vapor deposition Oxides Semiconducting materials |
| 通讯作者 | ma, j (reprint author), shandong univ, sch phys, jinan 250100, peoples r china. |
| 英文摘要 | beta-ga2o3 films have been homoepitaxially deposited on beta-ga2o3 (1 0 0) substrates by metal organic chemical vapor deposition (mocvd) method. the influences of different growth temperatures on the structure, raman and optical properties of the homoepitaxial films have been studied. the structure of the obtained films is monoclinic beta phase gallium oxide and the film deposited at 650 degrees c exhibits the best crystalline quality. the average transmittance of the samples in the visible and uv wavelength range is about 80%. the optical band gap of the films deposited at 600, 650 and 700 degrees c are about 4.72, 4.73 and 4.68 ev. respectively. (c) 2014 elsevier b.v. all rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 版本 | 出版稿 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/13774]  |
| 专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
| 作者单位 | 1.[Du, Xuejian 2.Mi, Wei 3.Luan, Caina 4.Li, Zhao 5.Ma, Jin] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China 6.[Xia, Changtai] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China |
| 推荐引用方式 GB/T 7714 | Du, Xuejian,Mi, Wei,Luan, Caina,et al. Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition[J]. j. cryst. growth,2014,404:75. |
| APA | Du, Xuejian,Mi, Wei,Luan, Caina,Li, Zhao,Xia, Changtai,&Ma, Jin.(2014).Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition.j. cryst. growth,404,75. |
| MLA | Du, Xuejian,et al."Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition".j. cryst. growth 404(2014):75. |
入库方式： OAI收割
来源：上海光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。