Influencing factors in the laser-induced damage threshold of Ta2O5 films prepared with different methods
文献类型：期刊论文
| 作者 | Xu, C.; Lin, D.; Feng, P.; Li, D.; Fan, H.; Qi, J.; Niu, J.; Qiang, Y. |
| 刊名 | j. optoelectron. adv. mater.
 |
| 出版日期 | 2015 |
| 卷号 | 17期号:42686页码:1739 |
| 通讯作者 | xu, c (reprint author), china univ min & technol, sch mat sci & engn, xuzhou 221116, peoples r china. |
| 英文摘要 | ta2o5 films were prepared by electron beam evaporation (ebe), ion-beam sputtering (ibs) and sol-gel methods, respectively. it showed that both the refractive indices and the surface roughness of the films were very relevant to the preparation methods. the laser-induced damaged threshold (lidt) at 1064 nm and 12 ns of the ebe, ibs and sol-gel films was 8,3, 14.4 and 19.6 j/cm(2), respectively. although the damage of all the films was initiated from defects, the ebe and ibs films presented the thermal melt damage feature, whereas the sol-gel film showed the damage feature of interaction between thermal melt and stress. the impurity defects and structural defects were the main influencing factors in the lidt of the ebe and ibs films. for the sol-gel film, not only the defect but also the special structure affected the laser damage resistance. the highest lidt achieved by the sol-gel film was attributed to the least defects and the network structure. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 版本 | 出版稿 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/13823]  |
| 专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
| 作者单位 | 1.[Xu, C. 2.Lin, D. 3.Feng, P. 4.Fan, H. 5.Qi, J. 6.Niu, J. 7.Qiang, Y.] China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221116, Peoples R China 8.[Li, D.] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, C.,Lin, D.,Feng, P.,et al. Influencing factors in the laser-induced damage threshold of Ta2O5 films prepared with different methods[J]. j. optoelectron. adv. mater.,2015,17(42686):1739. |
| APA | Xu, C..,Lin, D..,Feng, P..,Li, D..,Fan, H..,...&Qiang, Y..(2015).Influencing factors in the laser-induced damage threshold of Ta2O5 films prepared with different methods.j. optoelectron. adv. mater.,17(42686),1739. |
| MLA | Xu, C.,et al."Influencing factors in the laser-induced damage threshold of Ta2O5 films prepared with different methods".j. optoelectron. adv. mater. 17.42686(2015):1739. |
入库方式： OAI收割
来源：上海光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。