Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium
文献类型：期刊论文
| 作者 | Zhu, Meiping; Yi, Kui; Arhilger, Detlef; Qi, Hongji; Shao, Jianda |
| 刊名 | thin solid films
 |
| 出版日期 | 2013 |
| 卷号 | 540页码:17 |
| 通讯作者 | zhu, mp (reprint author), chinese acad sci, shanghai inst opt & fine mech, key lab mat high power laser, shanghai 201800, peoples r china. |
| 英文摘要 | hfo2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different advanced plasma source (aps) bias voltages. the refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. laser induced damage threshold (lidt) and damage mechanism are also evaluated and discussed. optical, structural, mechanical and laser induced damage properties of hfo2 films are found to be sensitive to aps bias voltage. the film stress can be tuned by varying the aps bias voltage. damage morphologies indicate the lidt of the hfo2 films at 1064 nm and 532 nm are dominated by the nodular-defect density in coatings, while the 355 nm lidt is dominated by the film absorption. hfo2 films with higher 1064 nm lidt than samples evaporated from hafnia are achieved with bias voltage of 100 v. (c) 2013 elsevier b.v. all rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 版本 | 出版稿 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/14837]  |
| 专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
| 作者单位 | 1.[Zhu, Meiping 2.Yi, Kui 3.Qi, Hongji 4.Shao, Jianda] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China 5.[Arhilger, Detlef] Leybold Opt GmbH, D-63755 Alzenau, Germany |
| 推荐引用方式 GB/T 7714 | Zhu, Meiping,Yi, Kui,Arhilger, Detlef,et al. Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium[J]. thin solid films,2013,540:17. |
| APA | Zhu, Meiping,Yi, Kui,Arhilger, Detlef,Qi, Hongji,&Shao, Jianda.(2013).Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium.thin solid films,540,17. |
| MLA | Zhu, Meiping,et al."Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium".thin solid films 540(2013):17. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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