Ultrafast optical Kerr effect in amorphous Ge10As40S30Se20 film induced by ultrashort laser pulses
文献类型：期刊论文
| 作者 | Liu QM ; Zhao XJ ; Gan FX(干福熹) ; Mi J ; Qian SX |
| 刊名 | j. optoelectron. adv. mater.
 |
| 出版日期 | 2005 |
| 卷号 | 7期号:3页码:1323 |
| 关键词 | amorphous Ge10As40S30Se20 film third-order nonlinearity femtosecond optical heterodyne detection of optical Kerr effect optical switch |
| ISSN号 | 1454-4164 |
| 中文摘要 | the results of the femtosecond optical heterodyne detection of optical kerr effect at 805 am with the 80 fs ultrafast pulses in amorphous ge10as40s30se20 film is reported in this letter. the film shows an optical nonlinear response of 200 fs under ultrafast 80 fs-pulse excitation, and the values of real and imaginary parts of nonlinear susceptibility chi((3)) were 9.0 x 10(-12) esu and -4.0 x 10(-12) esu respectively. the large third-order nonlinearity and ultrafast response are attributed to the ultrafast distortion of the electron orbits surrounding the average positions of the nucleus of ge, as, s and se atoms. this ge10as40s30se20 chalcogenide glass would be expected as a promising material for optical switching technique. |
| 学科主题 | 光存储 |
| 收录类别 | 0 |
| 语种 | 英语 |
| WOS记录号 | WOS:000229987500027 |
| 公开日期 | 2009-09-22 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/3921]  |
| 专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
| 推荐引用方式 GB/T 7714 | Liu QM,Zhao XJ,Gan FX,et al. Ultrafast optical Kerr effect in amorphous Ge10As40S30Se20 film induced by ultrashort laser pulses[J]. j. optoelectron. adv. mater.,2005,7(3):1323, 1328. |
| APA | Liu QM,Zhao XJ,干福熹,Mi J,&Qian SX.(2005).Ultrafast optical Kerr effect in amorphous Ge10As40S30Se20 film induced by ultrashort laser pulses.j. optoelectron. adv. mater.,7(3),1323. |
| MLA | Liu QM,et al."Ultrafast optical Kerr effect in amorphous Ge10As40S30Se20 film induced by ultrashort laser pulses".j. optoelectron. adv. mater. 7.3(2005):1323. |
入库方式： OAI收割
来源：上海光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。