Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals
文献类型：期刊论文
| 作者 | Lu J; Zhang ZB(张自兵) ; Chen QS(陈启生)
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2006 |
| 卷号 | 292期号:2页码:519-522 |
| 通讯作者邮箱 | qschen@imech.ac.cn |
| 关键词 | computer simulation growth model mass transfer growth from vapor seed crystals semiconducting silicon compounds |
| ISSN号 | 0022-0248 |
| 通讯作者 | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China. |
| 中文摘要 | The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation. |
| 学科主题 | 力学 |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 关键词[WOS] | VAPOR TRANSPORT GROWTH ; SUBLIMATION GROWTH ; SINGLE-CRYSTALS ; KINETICS |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000239481000077 |
| 公开日期 | 2007-06-15 ; 2007-12-05 ; 2009-06-23 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/16479]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Lu J,Zhang ZB,Chen QS. Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals[J]. Journal of Crystal Growth,2006,292(2):519-522. |
| APA | Lu J,Zhang ZB,&Chen QS.(2006).Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals.Journal of Crystal Growth,292(2),519-522. |
| MLA | Lu J,et al."Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals".Journal of Crystal Growth 292.2(2006):519-522. |
入库方式： OAI收割
来源：力学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。