Physics Design of CFETR: Determination of the Device Engineering Parameters
文献类型：期刊论文
| 作者 | Baonian Wan1,2 ; Siye Ding1; Jinping Qian1; Guoqiang Li1; Bingjia Xiao1,2; Guosheng Xu1
|
| 刊名 | ieee transactions on plasma science
 |
| 出版日期 | 2014 |
| 卷号 | 42期号:3页码:495-502 |
| 源URL | [http://ir.hfcas.ac.cn/handle/334002/20174]  |
| 专题 | 合肥物质科学研究院_中科院等离子体物理研究所 |
| 作者单位 | 1.the Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China. 2.the University of Science and Technology of China, Hefei 230027, China |
| 推荐引用方式 GB/T 7714 | Baonian Wan,Siye Ding,Jinping Qian,et al. Physics Design of CFETR: Determination of the Device Engineering Parameters[J]. ieee transactions on plasma science,2014,42(3):495-502. |
| APA | Baonian Wan,Siye Ding,Jinping Qian,Guoqiang Li,Bingjia Xiao,&Guosheng Xu.(2014).Physics Design of CFETR: Determination of the Device Engineering Parameters.ieee transactions on plasma science,42(3),495-502. |
| MLA | Baonian Wan,et al."Physics Design of CFETR: Determination of the Device Engineering Parameters".ieee transactions on plasma science 42.3(2014):495-502. |
入库方式： OAI收割
来源：合肥物质科学研究院
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