High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing
文献类型：期刊论文
| 作者 | Li, Jingling1,2; Jin, Hu1,2; Wang, Kelai1,3; Xie, Dehui1,3,4; Xu, Dehua1,2,4; Xu, Xueqing1,2 ; Xu, Gang1,2
|
| 刊名 | rsc advances
 |
| 出版日期 | 2016 |
| 卷号 | 6期号:76页码:72462-72470 |
| 英文摘要 | in this work, all-solution processed, multi-layer yellow quantum dot light emitting diodes (qleds), consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of cuins2/zns (zcis) qds, and electron transport layer of zno nanoparticles, are fabricated. to improve the carrier-balance in qleds, a ligand-exchange strategy is employed to replace n-dodecanethiol that caps the surface of cuins2/zns quantum dots with 2-ethylhexanethiol. after this processing, improvement of current efficiency and external quantum efficiency of qleds is achieved. the optimized diodes exhibit a maximum luminance of 2354 cd m(-2) and an external quantum efficiency of 0.63%, together with a lower turn-on voltage (decreases from 3.1 v to 2.7 v) using these ligand-exchanged qds as emitting materials. furthermore, cuins2-based qleds in our study exhibit color retainability with increasing voltage and prolonged use, and show great promise for practical application. |
| WOS标题词 | science & technology ; physical sciences |
| 类目[WOS] | chemistry, multidisciplinary |
| 研究领域[WOS] | chemistry |
| 关键词[WOS] | one-pot synthesis ; electron injection ; zno nanoparticles ; aqueous-solution ; s nanocrystals ; efficient ; electroluminescence ; photoluminescence ; ternary ; bright |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000381513300078 |
| 源URL | [http://ir.giec.ac.cn/handle/344007/11846]  |
| 专题 | 中国科学院广州能源研究所 |
| 作者单位 | 1.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy, Guangzhou 510640, Guangdong, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China 4.Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Jingling,Jin, Hu,Wang, Kelai,et al. High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing[J]. rsc advances,2016,6(76):72462-72470. |
| APA | Li, Jingling.,Jin, Hu.,Wang, Kelai.,Xie, Dehui.,Xu, Dehua.,...&Xu, Gang.(2016).High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing.rsc advances,6(76),72462-72470. |
| MLA | Li, Jingling,et al."High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing".rsc advances 6.76(2016):72462-72470. |
入库方式： OAI收割
来源：广州能源研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。