Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses
文献类型：期刊论文
| 作者 | Zhang Guangjun ; Gan FX(干福熹) ; Lysenko Sergiy ; Liu Huimin |
| 刊名 | j. appl. phys.
 |
| 出版日期 | 2007 |
| 卷号 | 101期号:3页码:33127 |
| 关键词 | PHASE-CHANGE INDUCED CRYSTALLIZATION SEMICONDUCTORS RECOMBINATION SILICON GOLD THERMALIZATION TRANSITIONS RELAXATION ABSORPTION |
| ISSN号 | 0021-8979 |
| 中文摘要 | the femtosecond pump-probe technique was used to study the carrier dynamics of amorphous ge2sb2te5 films. with carrier density at around 10(20)-10(21) cm(-3), carriers were excited within 1 ps and recovered to the initial state for less than 3 ns. on the picosecond time scale, the carrier relaxation consists of two components: a fast process within 5 ps and a slow process after 5 ps. the relaxation time of the fast component is a function of carrier density, which increases from 1.9 to 4.3 ps for the carrier density changing from 9.7x10(20) cm(-3) to 3.1x10(21) cm(-3). a possible interpretation of the relaxation processes is elucidated. in the first 5 ps the relaxation process is dominated by an intraband carrier relaxation and the carrier trapping. it is followed by a recombination process of trapped carriers at later delay time. (c) 2007 american institute of physics. |
| 学科主题 | 光存储 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000244250100027 |
| 公开日期 | 2009-09-22 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/3961]  |
| 专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
| 推荐引用方式 GB/T 7714 | Zhang Guangjun,Gan FX,Lysenko Sergiy,et al. Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses[J]. j. appl. phys.,2007,101(3):33127. |
| APA | Zhang Guangjun,干福熹,Lysenko Sergiy,&Liu Huimin.(2007).Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses.j. appl. phys.,101(3),33127. |
| MLA | Zhang Guangjun,et al."Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses".j. appl. phys. 101.3(2007):33127. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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