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Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO2-Supported Graphene Devices
文献类型：期刊论文
| 刊名 | NANO Letters
 |
| 出版日期 | 2011 |
| 卷号 | 11期号:2页码:767-771 |
| 关键词 | Graphene electrical properties thermal annealing wet-chemical treatment sensor |
| 语种 | 英语 |
| 源URL | [http://202.127.2.71:8080/handle/181331/10869]  |
| 专题 | 上海技术物理研究所_全文传递文献库_qwcd 期刊论文 |
| 推荐引用方式 GB/T 7714 | . Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO2-Supported Graphene Devices[J]. NANO Letters,2011,11(2):767-771. |
| APA | (2011).Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO2-Supported Graphene Devices.NANO Letters,11(2),767-771. |
| MLA | "Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO2-Supported Graphene Devices".NANO Letters 11.2(2011):767-771. |
入库方式： OAI收割
来源：上海技术物理研究所
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