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Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate
文献类型：期刊论文
| 刊名 | ACS NANO
 |
| 出版日期 | 2013 |
| 卷号 | 7期号:10页码:8809-8815 |
| 关键词 | MOS2 flexible electronics graphene transition metal dichalcogenides mobility bending radius transfer technique |
| 语种 | 英语 |
| 源URL | [http://202.127.2.71:8080/handle/181331/10875]  |
| 专题 | 上海技术物理研究所_全文传递文献库_qwcd 期刊论文 |
| 推荐引用方式 GB/T 7714 | . Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate[J]. ACS NANO,2013,7(10):8809-8815. |
| APA | (2013).Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate.ACS NANO,7(10),8809-8815. |
| MLA | "Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate".ACS NANO 7.10(2013):8809-8815. |
入库方式： OAI收割
来源：上海技术物理研究所
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