Reconstruction of Semiconductor Doping Profile from Laser-Beam-Induced Current Image
文献类型：期刊论文
| 刊名 | Siam Journal on Applied Mathematics
 |
| 出版日期 | 1994 |
| 卷号 | 54期号:4页码:1067-1082 |
| 关键词 | RECONSTRUCTION INVERSE PROBLEMS SEMICONDUCTORS LBIC |
| 语种 | 英语 |
| 源URL | [http://202.127.2.71:8080/handle/181331/11092]  |
| 专题 | 上海技术物理研究所_全文传递文献库_qwcd 期刊论文 |
| 推荐引用方式 GB/T 7714 | . Reconstruction of Semiconductor Doping Profile from Laser-Beam-Induced Current Image[J]. Siam Journal on Applied Mathematics,1994,54(4):1067-1082. |
| APA | (1994).Reconstruction of Semiconductor Doping Profile from Laser-Beam-Induced Current Image.Siam Journal on Applied Mathematics,54(4),1067-1082. |
| MLA | "Reconstruction of Semiconductor Doping Profile from Laser-Beam-Induced Current Image".Siam Journal on Applied Mathematics 54.4(1994):1067-1082. |
入库方式： OAI收割
来源：上海技术物理研究所
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