Subsurface Damage Measurement in Silicon Wafers with Cross-Polarisation Confocal Microscopy
文献类型：期刊论文
| 刊名 | International Journal of Nanomanufacturing
 |
| 出版日期 | 2006 |
| 卷号 | 1期号:2页码:272-282 |
| 关键词 | cross-polarisation confocal microscopy grinding manufacturing damage measurement nondestructive evaluation NDE silicon wafers subsurface damage SSD semiconductor devices nanomanufacturing |
| 语种 | 英语 |
| 源URL | [http://202.127.2.71:8080/handle/181331/11093]  |
| 专题 | 上海技术物理研究所_全文传递文献库_qwcd 期刊论文 |
| 推荐引用方式 GB/T 7714 | . Subsurface Damage Measurement in Silicon Wafers with Cross-Polarisation Confocal Microscopy[J]. International Journal of Nanomanufacturing,2006,1(2):272-282. |
| APA | (2006).Subsurface Damage Measurement in Silicon Wafers with Cross-Polarisation Confocal Microscopy.International Journal of Nanomanufacturing,1(2),272-282. |
| MLA | "Subsurface Damage Measurement in Silicon Wafers with Cross-Polarisation Confocal Microscopy".International Journal of Nanomanufacturing 1.2(2006):272-282. |
入库方式： OAI收割
来源：上海技术物理研究所
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