The Influence of the Silicon/Silicon Oxide Space Charge Region on Excess Charge Carrier Kinetics in Silicon
文献类型：期刊论文
| 刊名 | Physica Status Solidi B-Basic Solid State Physics
 |
| 出版日期 | 2011 |
| 卷号 | 248期号:2页码:352-360 |
| 关键词 | heterojunctions silicon SiO(2) surface photovoltage time-resolved conductivity |
| 语种 | 英语 |
| 源URL | [http://202.127.2.71:8080/handle/181331/11222]  |
| 专题 | 上海技术物理研究所_全文传递文献库_qwcd 期刊论文 |
| 推荐引用方式 GB/T 7714 | . The Influence of the Silicon/Silicon Oxide Space Charge Region on Excess Charge Carrier Kinetics in Silicon[J]. Physica Status Solidi B-Basic Solid State Physics,2011,248(2):352-360. |
| APA | (2011).The Influence of the Silicon/Silicon Oxide Space Charge Region on Excess Charge Carrier Kinetics in Silicon.Physica Status Solidi B-Basic Solid State Physics,248(2),352-360. |
| MLA | "The Influence of the Silicon/Silicon Oxide Space Charge Region on Excess Charge Carrier Kinetics in Silicon".Physica Status Solidi B-Basic Solid State Physics 248.2(2011):352-360. |
入库方式： OAI收割
来源：上海技术物理研究所
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