Study the Effect of Junction Temperature on the Peak Wavelength in GaN-Based High-Power Green Light Emitting Diodes
文献类型：会议论文
| 出版日期 | 2012 |
| 会议名称 | International Conference on Chemical, Material and Metallurgical Engineering (ICCMME 2011) |
| 关键词 | GaN-based Power-LED Junction temperature Peak wavelength |
| 语种 | 英语 |
| 源URL | [http://202.127.2.71:8080/handle/181331/10927]  |
| 专题 | 上海技术物理研究所_全文传递文献库_qwcd 会议论文 |
| 推荐引用方式 GB/T 7714 | . Study the Effect of Junction Temperature on the Peak Wavelength in GaN-Based High-Power Green Light Emitting Diodes[C]. 见:International Conference on Chemical, Material and Metallurgical Engineering (ICCMME 2011). |
入库方式： OAI收割
来源：上海技术物理研究所
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