Si underlayer induced nano-ablation in AgInSbTe thin films
文献类型：期刊论文
| 作者 | Jiao Xin-Bing ; Wei Jing-Song ; Gan Fu-Xi |
| 刊名 | chin. phys. lett.
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:1页码:209 |
| ISSN号 | 0256-307x |
| 中文摘要 | aginsbtelsi thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. using si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70nm in the aginsbte phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405nm and objective-lens numerical aperture 0.90. the nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures. |
| 学科主题 | 光存储 |
| 语种 | 英语 |
| WOS记录号 | WOS:000252613500057 |
| 公开日期 | 2009-09-22 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/4069]  |
| 专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
| 推荐引用方式 GB/T 7714 | Jiao Xin-Bing,Wei Jing-Song,Gan Fu-Xi. Si underlayer induced nano-ablation in AgInSbTe thin films[J]. chin. phys. lett.,2008,25(1):209, 211. |
| APA | Jiao Xin-Bing,Wei Jing-Song,&Gan Fu-Xi.(2008).Si underlayer induced nano-ablation in AgInSbTe thin films.chin. phys. lett.,25(1),209. |
| MLA | Jiao Xin-Bing,et al."Si underlayer induced nano-ablation in AgInSbTe thin films".chin. phys. lett. 25.1(2008):209. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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