Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors
文献类型：期刊论文
| 作者 | JunWang XiaoshuangChen WeidaHu ZhenghuaY ChunLin XiaoningHu JinGuo FengXie JieZhou JianLiang XiaofangWang WeiLu |
| 刊名 | INFRARED PHYS TECHN
 |
| 出版日期 | 2013-01-01 |
| 卷号 | 159期号:0 |
| 关键词 | HgCdTeinfrareddetector Darkcurrent Arsenicdoped Theoreticalcalculation R–Vcharacteristics |
| 学科主题 | 红外基础研究 |
| 公开日期 | 2014-11-10 |
| 源URL | [http://202.127.1.142/handle/181331/7754]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | JunWang XiaoshuangChen WeidaHu ZhenghuaY ChunLin XiaoningHu JinGuo FengXie JieZhou JianLiang XiaofangWang WeiLu. Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors[J]. INFRARED PHYS TECHN,2013,159(0). |
| APA | JunWang XiaoshuangChen WeidaHu ZhenghuaY ChunLin XiaoningHu JinGuo FengXie JieZhou JianLiang XiaofangWang WeiLu.(2013).Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors.INFRARED PHYS TECHN,159(0). |
| MLA | JunWang XiaoshuangChen WeidaHu ZhenghuaY ChunLin XiaoningHu JinGuo FengXie JieZhou JianLiang XiaofangWang WeiLu."Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors".INFRARED PHYS TECHN 159.0(2013). |
入库方式： OAI收割
来源：上海技术物理研究所
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