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Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

文献类型：期刊论文

作者Huajun Sun ; Lisong Hou ; Yiqun Wu ; Jingsong Wei
刊名j. non-cryst. solids
出版日期2008
卷号354期号:52-54页码:5563
关键词Amorphous metals metallic glasses Alloys Amorphous semiconductors III-V Semiconductors Crystallization Glass ceramics Conductivity Films and coatings Sputtering Glass transition Radiation effects Laser-matter interactions Microcrystallinity Phases and equilibria Structure Long range order Short-range order Structural relaxation X-ray diffraction
ISSN号0022-3093
中文摘要sheet resistance of laser-irradiated ge2sb2te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. with increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) omega/square at about 580 mw. the abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by x-ray diffraction (xrd) study of the samples around the abrupt change point. crystallized dots were also formed in the amorphous ge2sb2te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) omega/square respectively, deduced from the i-v curves that is obtained by conductive atomic force microscope (c-afm). (c) 2008 elsevier b.v. all rights reserved.
学科主题光存储
收录类别EI
资助信息national basic research program of china [2007cb935402]; national natural science foundation of china [50502036, 60644002]
语种英语
公开日期2009-09-22 ; 2010-10-12
源URL[http://ir.siom.ac.cn/handle/181231/4071]  
专题上海光学精密机械研究所_高密度光存储技术实验室
推荐引用方式
GB/T 7714		 Huajun Sun,Lisong Hou,Yiqun Wu,et al. Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement[J]. j. non-cryst. solids,2008,354(52-54):5563, 5566.
APA Huajun Sun,Lisong Hou,Yiqun Wu,&Jingsong Wei.(2008).Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement.j. non-cryst. solids,354(52-54),5563.
MLA Huajun Sun,et al."Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement".j. non-cryst. solids 354.52-54(2008):5563.

入库方式： OAI收割

来源：上海光学精密机械研究所

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