Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation
文献类型:期刊论文
作者 | Sun Hua-Jun ; Hou Li-Song ; Wu Yi-Qun ; Tang Xiao-Dong |
刊名 | chin. phys. lett.
![]() |
出版日期 | 2009 |
卷号 | 26期号:2页码:24203 |
关键词 | CHANGE MEMORIES OPTICAL MEMORY ELECTROLYTES STATE METAL |
ISSN号 | 0256-307x |
中文摘要 | we demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using ge1sb4te7 films as the working material. the polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (cafm). this reversible set/reset switching effect is induced by voltage pulses and their polarity. the change of electrical resistance due to the switching effect is approximately two orders of magnitude. |
学科主题 | 光存储 |
资助信息 | national basic research programme of china [2007cb935402]; national natural science foundation of china [50502036, 60644002] |
语种 | 英语 |
WOS记录号 | WOS:000263243800033 |
公开日期 | 2009-09-22 |
源URL | [http://ir.siom.ac.cn/handle/181231/4083] ![]() |
专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
推荐引用方式 GB/T 7714 | Sun Hua-Jun,Hou Li-Song,Wu Yi-Qun,et al. Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation[J]. chin. phys. lett.,2009,26(2):24203. |
APA | Sun Hua-Jun,Hou Li-Song,Wu Yi-Qun,&Tang Xiao-Dong.(2009).Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation.chin. phys. lett.,26(2),24203. |
MLA | Sun Hua-Jun,et al."Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation".chin. phys. lett. 26.2(2009):24203. |
入库方式: OAI收割
来源:上海光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。