Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation
文献类型：期刊论文
| 作者 | Sun Hua-Jun ; Hou Li-Song ; Wu Yi-Qun ; Tang Xiao-Dong |
| 刊名 | chin. phys. lett.
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:2页码:24203 |
| 关键词 | CHANGE MEMORIES OPTICAL MEMORY ELECTROLYTES STATE METAL |
| ISSN号 | 0256-307x |
| 中文摘要 | we demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using ge1sb4te7 films as the working material. the polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (cafm). this reversible set/reset switching effect is induced by voltage pulses and their polarity. the change of electrical resistance due to the switching effect is approximately two orders of magnitude. |
| 学科主题 | 光存储 |
| 资助信息 | national basic research programme of china [2007cb935402]; national natural science foundation of china [50502036, 60644002] |
| 语种 | 英语 |
| WOS记录号 | WOS:000263243800033 |
| 公开日期 | 2009-09-22 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/4083]  |
| 专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
| 推荐引用方式 GB/T 7714 | Sun Hua-Jun,Hou Li-Song,Wu Yi-Qun,et al. Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation[J]. chin. phys. lett.,2009,26(2):24203. |
| APA | Sun Hua-Jun,Hou Li-Song,Wu Yi-Qun,&Tang Xiao-Dong.(2009).Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation.chin. phys. lett.,26(2),24203. |
| MLA | Sun Hua-Jun,et al."Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation".chin. phys. lett. 26.2(2009):24203. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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