中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

文献类型:期刊论文

作者Sun Hua-Jun ; Hou Li-Song ; Wu Yi-Qun ; Tang Xiao-Dong
刊名chin. phys. lett.
出版日期2009
卷号26期号:2页码:24203
关键词CHANGE MEMORIES OPTICAL MEMORY ELECTROLYTES STATE METAL
ISSN号0256-307x
中文摘要we demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using ge1sb4te7 films as the working material. the polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (cafm). this reversible set/reset switching effect is induced by voltage pulses and their polarity. the change of electrical resistance due to the switching effect is approximately two orders of magnitude.
学科主题光存储
资助信息national basic research programme of china [2007cb935402]; national natural science foundation of china [50502036, 60644002]
语种英语
WOS记录号WOS:000263243800033
公开日期2009-09-22
源URL[http://ir.siom.ac.cn/handle/181231/4083]  
专题上海光学精密机械研究所_高密度光存储技术实验室
推荐引用方式
GB/T 7714
Sun Hua-Jun,Hou Li-Song,Wu Yi-Qun,et al. Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation[J]. chin. phys. lett.,2009,26(2):24203.
APA Sun Hua-Jun,Hou Li-Song,Wu Yi-Qun,&Tang Xiao-Dong.(2009).Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation.chin. phys. lett.,26(2),24203.
MLA Sun Hua-Jun,et al."Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation".chin. phys. lett. 26.2(2009):24203.

入库方式: OAI收割

来源:上海光学精密机械研究所

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