Molecular Beam Epitaxy-Grown SnSe in the Rock-Salt Structure: An Artificial Topological Crystalline Insulator Material
文献类型:期刊论文
作者 | Wang, ZY ; Wang, JF ; Zang, YY ; Zhang, QH ; Shi, JA ; Jiang, T ; Gong, Y ; Song, CL ; Ji, SH ; Wang, LL ; Gu, L ; He, K ; Duan, WH ; Ma, XC ; Chen, X ; Xue, QK |
刊名 | ADVANCED MATERIALS |
出版日期 | 2015 |
卷号 | 27期号:28页码:4150 |
公开日期 | 2016-12-26 |
源URL | [http://ir.iphy.ac.cn/handle/311004/60211] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Wang, ZY,Wang, JF,Zang, YY,et al. Molecular Beam Epitaxy-Grown SnSe in the Rock-Salt Structure: An Artificial Topological Crystalline Insulator Material[J]. ADVANCED MATERIALS,2015,27(28):4150. |
APA | Wang, ZY.,Wang, JF.,Zang, YY.,Zhang, QH.,Shi, JA.,...&Xue, QK.(2015).Molecular Beam Epitaxy-Grown SnSe in the Rock-Salt Structure: An Artificial Topological Crystalline Insulator Material.ADVANCED MATERIALS,27(28),4150. |
MLA | Wang, ZY,et al."Molecular Beam Epitaxy-Grown SnSe in the Rock-Salt Structure: An Artificial Topological Crystalline Insulator Material".ADVANCED MATERIALS 27.28(2015):4150. |
入库方式: OAI收割
来源:物理研究所
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