A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD
文献类型：期刊论文
| 作者 | Chen, FS ; Chen, H ; Deng, Z ; Lu, TP ; Fang, YT ; Jiang, Y ; Ma, ZG ; He, M |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2015 |
| 卷号 | 118期号:4页码:1453 |
| 公开日期 | 2016-12-26 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/60253]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, FS,Chen, H,Deng, Z,et al. A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2015,118(4):1453. |
| APA | Chen, FS.,Chen, H.,Deng, Z.,Lu, TP.,Fang, YT.,...&He, M.(2015).A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,118(4),1453. |
| MLA | Chen, FS,et al."A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 118.4(2015):1453. |
入库方式： OAI收割
来源：物理研究所
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