High-Voltage Breakdown and the Gunn Effect in GaAs/AlGaAsNanoconstrictions
文献类型：期刊论文
| 作者 | Rui Chen, Weilu Gao, Xuan Wang, Gregory R. Aizin, John Mikalopas, Takashi Arikawa, Koichiro Tanaka, David B. Eason, Gottfried Strasser, Junichiro Kono, and Jonathan P. Bird |
| 刊名 | IEEE Transactions on nanotechnology
 |
| 出版日期 | 2015 |
| 卷号 | 14期号:3页码:524 |
| 公开日期 | 2016-12-26 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/60601]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Rui Chen, Weilu Gao, Xuan Wang, Gregory R. Aizin, John Mikalopas, Takashi Arikawa, Koichiro Tanaka, David B. Eason, Gottfried Strasser, Junichiro Kono, and Jonathan P. Bird. High-Voltage Breakdown and the Gunn Effect in GaAs/AlGaAsNanoconstrictions[J]. IEEE Transactions on nanotechnology,2015,14(3):524. |
| APA | Rui Chen, Weilu Gao, Xuan Wang, Gregory R. Aizin, John Mikalopas, Takashi Arikawa, Koichiro Tanaka, David B. Eason, Gottfried Strasser, Junichiro Kono, and Jonathan P. Bird.(2015).High-Voltage Breakdown and the Gunn Effect in GaAs/AlGaAsNanoconstrictions.IEEE Transactions on nanotechnology,14(3),524. |
| MLA | Rui Chen, Weilu Gao, Xuan Wang, Gregory R. Aizin, John Mikalopas, Takashi Arikawa, Koichiro Tanaka, David B. Eason, Gottfried Strasser, Junichiro Kono, and Jonathan P. Bird."High-Voltage Breakdown and the Gunn Effect in GaAs/AlGaAsNanoconstrictions".IEEE Transactions on nanotechnology 14.3(2015):524. |
入库方式： OAI收割
来源：物理研究所
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