Electronic structures and magnetism of Rh(3)Z (Z=Al, Ga, In, Si, Ge, Sn, Pb, Sb) with DO3 structures
文献类型:期刊论文
作者 | Wang, XT ; Dai, XF ; Wang, LY ; Liu, XF ; Wang, WH ; Wu, GH ; Tang, CC ; Liu, GD |
刊名 | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS |
出版日期 | 2015 |
卷号 | 378页码:16 |
公开日期 | 2016-12-26 |
源URL | [http://ir.iphy.ac.cn/handle/311004/60814] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Wang, XT,Dai, XF,Wang, LY,et al. Electronic structures and magnetism of Rh(3)Z (Z=Al, Ga, In, Si, Ge, Sn, Pb, Sb) with DO3 structures[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2015,378:16. |
APA | Wang, XT.,Dai, XF.,Wang, LY.,Liu, XF.,Wang, WH.,...&Liu, GD.(2015).Electronic structures and magnetism of Rh(3)Z (Z=Al, Ga, In, Si, Ge, Sn, Pb, Sb) with DO3 structures.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,378,16. |
MLA | Wang, XT,et al."Electronic structures and magnetism of Rh(3)Z (Z=Al, Ga, In, Si, Ge, Sn, Pb, Sb) with DO3 structures".JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 378(2015):16. |
入库方式: OAI收割
来源:物理研究所
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