Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure
文献类型：期刊论文
| 作者 | Wang, X (Wang, Xin); Lu, W (Lu, Wu) ; Ma, WY (Ma, Wu-Ying); Guo, Q (Guo, Qi); Wang, ZK (Wang, Zhi-Kuan); He, CF (He, Cheng-Fa); Liu, MH (Liu, Mo-Han); Li, XL (Li, Xiao-Long); Jia, JC (Jia, Jin-Cheng)
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| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2016 |
| 卷号 | 33期号:8 |
| 通讯作者 | Lu, W |
| 英文摘要 | The radiation damage responses of fluorinated and non-fluorinated lateral PNP transistors are studied with specially designed gated-controlled lateral PNP transistors that allow for the extraction of the oxide trapped charge (N-ot) and interface trap (N-it) densities. All the samples are exposed in the Co-60 gamma ray with the dose rate of 0.5 Gy(Si)/s. After the irradiation, the buildup of N-ot and N-it of the samples with total dose is investigated by the gate sweep test technique. The results show that the radiation resistance of fluorinated lateral PNP transistors is significantly enhanced compared with the non-fluorinated ones. |
| 收录类别 | SCI |
| WOS记录号 | WOS:000386179400020 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4644]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.State Key Lab Analog Integrated Circuit, Chongqing 400060, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, X ,Lu, W ,Ma, WY ,et al. Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure[J]. CHINESE PHYSICS LETTERS,2016,33(8). |
| APA | Wang, X .,Lu, W .,Ma, WY .,Guo, Q .,Wang, ZK .,...&Jia, JC .(2016).Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure.CHINESE PHYSICS LETTERS,33(8). |
| MLA | Wang, X ,et al."Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure".CHINESE PHYSICS LETTERS 33.8(2016). |
入库方式： OAI收割
来源：新疆理化技术研究所
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