Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors
文献类型：期刊论文
| 作者 | Zheng, QW (Zheng, Qi-Wen); Cui, JW (Cui, Jiang-Wei); Zhou, H (Zhou, Hang); Yu, DZ (Yu, De-Zhao); Yu, XF (Yu, Xue-Feng) ; Guo, Q (Guo, Qi)
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| 刊名 | CHINESE PHYSICS LETTERS
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| 出版日期 | 2016 |
| 卷号 | 33期号:7 |
| 英文摘要 | The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) is investigated. Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation (STI). The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect. |
| 收录类别 | SCI |
| WOS记录号 | WOS:000379260700029 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4651]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng, QW ,Cui, JW ,Zhou, H ,et al. Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors[J]. CHINESE PHYSICS LETTERS,2016,33(7). |
| APA | Zheng, QW ,Cui, JW ,Zhou, H ,Yu, DZ ,Yu, XF ,&Guo, Q .(2016).Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors.CHINESE PHYSICS LETTERS,33(7). |
| MLA | Zheng, QW ,et al."Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors".CHINESE PHYSICS LETTERS 33.7(2016). |
入库方式： OAI收割
来源：新疆理化技术研究所
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