Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT
文献类型：期刊论文
| 作者 | Zhang, JX (Zhang, Jinxin); Guo, Q (Guo, Qi) ; Guo, HX (Guo, Hongxia); Lu, W (Lu, Wu); He, CH (He, Chaohui); Wang, X (Wang, Xin)[ 2 ]; Li, P (Li, Pei); Liu, M (Liu, Mohan)
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| 刊名 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE
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| 出版日期 | 2016 |
| 卷号 | 63期号:2页码:1251-1258 |
| 关键词 | Bias conditions Co-60 gamma irradiation SiGe HBT total ionizing dose effect |
| 英文摘要 | The effect of bias condition on total ionizing dose (TID) of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) is investigated. The SiGe HBTs are set at forward, saturated, cutoff, and all-grounded biases during Co-60 gamma irradiation. After each irradiation stops, the forward Gummel characteristic and inverse Gummel characteristic are measured, and a 3-D simulation of TID for SiGe HBT is performed. The mechanism of TID in different bias conditions is obtained by analyzing normalized excess base current. The results show that the TID damages are different at various irradiation biases of the SiGe HBT, and the worst bias between forward and inverse Gummel characteristics exhibits inconsistently. The reason could be attributed to different defects produced and accumulated in oxide layers by irradiation at various bias conditions. To be specific, the oxide trap charges (N-ot) in emitter/base (E/B) Spacer is important to the forward Gummel characteristic, yet the N-ot in LOCOS determines the inverse Gummel characteristic. However, after long time irradiation, the interface states (N-it) both in E/B Spacer and LOCOS dominate the damage to the SiGe HBT despite in forward Gummel mode or inverse Gummel mode. |
| 收录类别 | SCI |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4671]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | 1.Xi An Jiao Tong Univ, Xian 710049, Shanxi, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Xinjiang, Peoples R China 3.Northwest Inst Nucl Technol, Xian 710024, Shanxi, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, JX ,Guo, Q ,Guo, HX ,et al. Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2016,63(2):1251-1258. |
| APA | Zhang, JX .,Guo, Q .,Guo, HX .,Lu, W .,He, CH .,...&Liu, M .(2016).Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,63(2),1251-1258. |
| MLA | Zhang, JX ,et al."Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 63.2(2016):1251-1258. |
入库方式： OAI收割
来源：新疆理化技术研究所
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