Total ionizing dose effects of domestic SiGe HBTs under different dose rates
文献类型：期刊论文
| 作者 | Liu, MH (Liu, Mo-Han); Lu, W (Lu, Wu) ; Ma, WY (Ma, Wu-Ying); Wang, X (Wang, Xin); Guo, Q (Guo, Qi); He, CF (He, Cheng-Fa); Jiang, K (Jiang, Ke); Li, XL (Li, Xiao-Long); Xun, MZ (Xun, Ming-Zhu)
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| 刊名 | CHINESE PHYSICS C
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| 出版日期 | 2016 |
| 卷号 | 40期号:3 |
| 关键词 | SiGe HBTs TID ELDRS annealing |
| 通讯作者 | Lu, W |
| 英文摘要 | The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestically are investigated under dose rates of 800 mGy(Si)/s and 1.3 mGy(Si)/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect (TDE). For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity (ELDRS) effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed. |
| 收录类别 | SCI |
| WOS记录号 | WOS:000372390600015 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4677]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | 1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, MH ,Lu, W ,Ma, WY ,et al. Total ionizing dose effects of domestic SiGe HBTs under different dose rates[J]. CHINESE PHYSICS C,2016,40(3). |
| APA | Liu, MH .,Lu, W .,Ma, WY .,Wang, X .,Guo, Q .,...&Xun, MZ .(2016).Total ionizing dose effects of domestic SiGe HBTs under different dose rates.CHINESE PHYSICS C,40(3). |
| MLA | Liu, MH ,et al."Total ionizing dose effects of domestic SiGe HBTs under different dose rates".CHINESE PHYSICS C 40.3(2016). |
入库方式： OAI收割
来源：新疆理化技术研究所
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