Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors
文献类型：期刊论文
| 作者 | Wang, F (Wang Fan); Li, YD (Li Yu-Dong) ; Guo, Q (Guo Qi); Wang, B (Wang Bo); Zhang, XY (Zhang Xing-Yao); Wen, L (Wen Lin); He, CF (He Cheng-Fa)
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| 刊名 | ACTA PHYSICA SINICA
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| 出版日期 | 2016 |
| 卷号 | 65期号:2 |
| 关键词 | complementary metal oxide semiconductor image sensor total ionizing dose radiation effect pinned photodiode full well chargecapacity |
| 通讯作者 | Li, YD |
| 英文摘要 | Radiation effects on four-transistor (4T) active pixel sensor complementary metal-oxide-semiconductor (CMOS) image sensor induced by gamma-ray are presented. The samples are 4 megapixels resolution CMOS image sensor using 11 mu m pitch high dynamic 4T pixels. They are manufactured with 0.18 mu m specialized CMOS image sensortechnology. Three samples have been exposed to 200 krad(Si) Co-60 gamma-ray with different biasing condition (1(#) is static-biased, 2(#) dynamic-biased, and 3(#) is grounded during irradiation), and the dose rate is 50 rad(Si)/s. The influences of radiation on full well charge capacity, dark current, and conversion gain of the device are investigated. Experimental result shows that the conversion gain is not sensitive to the ionizing radiation, and it is mainly determined by the CMOS digital or analog circuits. It is known that the total ionizing dose for induced degradation in deep submicron MOSFET is negligible and so there is almost no radiation effect on the digital or analog circuits exposed to the ionizing radiation. Therefore, conversion gain does not have obvious degradation after irradiation. While full well charge capacity has a degradation after irradiation, which is due to the change of TG channel doping profile induced by the radiation. As the dose increases, dark current increases rapidly. The main source of dark current in 4T CMOS image sensor is the current from STI interface and TG-PD overlap region. Experimental result also shows that different from 3T CMOS image sensor, there is no biasing effect in 4T CMOS image sensor. This is because for the 4T CMOS image sensor most of the degradation come from STI interface and TG-PD overlap region, while biasing condition almost has no influence on both of them. |
| 收录类别 | SCI |
| WOS记录号 | WOS:000370942000023 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4688]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 固体辐射物理研究室 |
| 作者单位 | 1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, F ,Li, YD ,Guo, Q ,et al. Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors[J]. ACTA PHYSICA SINICA,2016,65(2). |
| APA | Wang, F .,Li, YD .,Guo, Q .,Wang, B .,Zhang, XY .,...&He, CF .(2016).Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors.ACTA PHYSICA SINICA,65(2). |
| MLA | Wang, F ,et al."Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors".ACTA PHYSICA SINICA 65.2(2016). |
入库方式： OAI收割
来源：新疆理化技术研究所
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