Contributions of dielectronic, trielectronic, and metastable channels to the resonant intershell recombination of highly charged silicon ions
文献类型：期刊论文
| 作者 | Baumann, Thomas M.1,2; Harman, Zoltan1,3; Stark, Julian1; Beilmann, Christian1; Liang, Guiyun4 ; Mokler, Paul H.1; Ullrich, Joachim5; Lopez-Urrutia, Jose R. Crespo1
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| 刊名 | PHYSICAL REVIEW A
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| 出版日期 | 2014-11-07 |
| 卷号 | 90期号:5 |
| 英文摘要 | Intershell, resonant electronic recombination is studied experimentally in an electron-beam ion trap for O-like Si6+ to He-like Si12+ ions at plasma temperatures in the megakelvin range similar to those found in the solar radiative zone and is compared to extended multiconfiguration Dirac-Fock and relativistic configuration-interaction predictions. For this low-Z ion, the higher-order electronic recombination processes are comparable in strength to the first-order one. The ratio of trielectronic to dielectric recombination for B-like species agrees well with predictions, whereas for C-like ions the measured value is only half as large. This difference is explained by the influence of metastable states populated in the recombining plasma. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000345243400005 |
| 源URL | [http://ir.bao.ac.cn/handle/114a11/6405]  |
| 专题 | 国家天文台_光学天文研究部 |
| 作者单位 | 1.Max Planck Inst Kernphys, D-69117 Heidelberg, Germany 2.Michigan State Univ, Natl Superconducting Cyclotron Lab, E Lansing, MI 48824 USA 3.ExtreMe Matter Inst EMMI, D-64291 Darmstadt, Germany 4.Chinese Acad Sci, Key Lab Opt Astron, Natl Astron Observ, Beijing, Peoples R China 5.Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany |
| 推荐引用方式 GB/T 7714 | Baumann, Thomas M.,Harman, Zoltan,Stark, Julian,et al. Contributions of dielectronic, trielectronic, and metastable channels to the resonant intershell recombination of highly charged silicon ions[J]. PHYSICAL REVIEW A,2014,90(5). |
| APA | Baumann, Thomas M..,Harman, Zoltan.,Stark, Julian.,Beilmann, Christian.,Liang, Guiyun.,...&Lopez-Urrutia, Jose R. Crespo.(2014).Contributions of dielectronic, trielectronic, and metastable channels to the resonant intershell recombination of highly charged silicon ions.PHYSICAL REVIEW A,90(5). |
| MLA | Baumann, Thomas M.,et al."Contributions of dielectronic, trielectronic, and metastable channels to the resonant intershell recombination of highly charged silicon ions".PHYSICAL REVIEW A 90.5(2014). |
入库方式： OAI收割
来源：国家天文台
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