Raman and Visible-Near Infrared Spectra of Cu(InGa)Se-2 Films
文献类型:期刊论文
作者 | Xu Dong-mei1; Pan Kun1; Liu Xu-wei1; Wang Xue-jin1; Wang Wen-zhong2; Liang Chun-jun3; Wang Zhi2 |
刊名 | SPECTROSCOPY AND SPECTRAL ANALYSIS
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出版日期 | 2016-10-01 |
卷号 | 36期号:10页码:3197-3201 |
关键词 | CIGS Thin films Raman Vis-NIR spectra |
ISSN号 | 1000-0593 |
英文摘要 | Cu(InxGa1-x)Se-2 (GIGS) precursor films were prepared on ITO glass with potentiostatic electrodeposition. High quality CIGS films were obtained by selenization of the precursor films at high temperature in tubular furnace full of argon gas. X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis-NIR spectroscopy were used to characterize the structure, morphology, composition and Vis-NIR absorption of CIGS films, respectively. XRD results show the selenized CIGS films have a preferential orientation (112) with average crystallite of 24. 7 nm. Raman spectroscopy reveals that the CIGS films are pure quaternaryphases with chalcopyrite structure, and without binary or ternary phases in the films. Vis-NIR measurements determine that the bandgap of CIGS increases with the increase of Ga concentration in the film. When the Ga concentration is 5. 41%, its bandgap is about 1. 11 eV, and the calculated ratio of Ga to (Ga+In) is 16. 3%, which is less than the ratio of Ga to (Ga+In), 21. 4%, measured by SEM. This indicates that crystallinity of CIGS filmsneeds to be further improved. All the measurements demonstratethat optimum ITO/CIGS has a promising application in bifacial solar cells. In this paper, we provide a newmethodtoelectrodeposit low cost CIGS precursor films and a new method forselenization ofthe precursor films at high temperature. As a result, theuniform and compact CIGS films with good adhesion on ITO are successfully fabricated by these methods. The above characterization show that we have obtained CIGS films with high crystallinity, near stoichiometry, few impurity phases and superior light absorption. Electrodeposition, like magnetron sputtering, is very suitable for large-scale industrial production. The research work in this paper is therefore important and considerable to massive production of electrodeposition of CIGS films. |
WOS标题词 | Science & Technology ; Technology |
类目[WOS] | Spectroscopy |
研究领域[WOS] | Spectroscopy |
关键词[WOS] | CIGS SOLAR-CELLS ; LAYER ; FABRICATION |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000385475500021 |
源URL | [http://ir.ipe.ac.cn/handle/122111/21558] ![]() |
专题 | 过程工程研究所_多相复杂系统国家重点实验室 |
作者单位 | 1.China Agr Univ, Coll Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Proc Engn, Beijing 100190, Peoples R China 3.Beijing Jiaotong Univ, Sch Sci, Beijing 100044, Peoples R China |
推荐引用方式 GB/T 7714 | Xu Dong-mei,Pan Kun,Liu Xu-wei,et al. Raman and Visible-Near Infrared Spectra of Cu(InGa)Se-2 Films[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS,2016,36(10):3197-3201. |
APA | Xu Dong-mei.,Pan Kun.,Liu Xu-wei.,Wang Xue-jin.,Wang Wen-zhong.,...&Wang Zhi.(2016).Raman and Visible-Near Infrared Spectra of Cu(InGa)Se-2 Films.SPECTROSCOPY AND SPECTRAL ANALYSIS,36(10),3197-3201. |
MLA | Xu Dong-mei,et al."Raman and Visible-Near Infrared Spectra of Cu(InGa)Se-2 Films".SPECTROSCOPY AND SPECTRAL ANALYSIS 36.10(2016):3197-3201. |
入库方式: OAI收割
来源:过程工程研究所
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