Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC
文献类型：期刊论文
| 作者 | Liang, Feng1; Chen, Ping1; Zhao, De-Gang1; Jiang, De-Sheng1; Zhao, Zhi-Juan2; Liu, Zong-Shun1; Zhu, Jian-Jun1; Yang, Jing1; Liu, Wei1; He, Xiao-Guang1 |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2016-05-01 |
| 卷号 | 25期号:5 |
| 关键词 | AlN electron affinity photoelectron spectroscopy metalorganic chemical vapor deposition |
| 英文摘要 | We have investigated the electron affinity of Si-doped AlN films (N-Si = 1.0 x 10(18)-1.0 x 10(19) cm(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/36088]  |
| 专题 | 化学研究所_分析测试中心 |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Chem, Ctr Physicochem Anal & Measurement, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China 4.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liang, Feng,Chen, Ping,Zhao, De-Gang,et al. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC[J]. CHINESE PHYSICS B,2016,25(5). |
| APA | Liang, Feng.,Chen, Ping.,Zhao, De-Gang.,Jiang, De-Sheng.,Zhao, Zhi-Juan.,...&Du, Guo-Tong.(2016).Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC.CHINESE PHYSICS B,25(5). |
| MLA | Liang, Feng,et al."Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC".CHINESE PHYSICS B 25.5(2016). |
入库方式： OAI收割
来源：化学研究所
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