Controllable thin-film morphology and structure for 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8BTBT) based organic field-effect transistors
文献类型：期刊论文
| 作者 | Huang, Yulan1; Sun, Jia1; Zhang, Jidong2; Wang, Shitan1; Huang, Han1; Zhang, Jian3; Yan, Donghang2; Gao, Yongli1,4; Yang, Junliang1,2 |
| 刊名 | ORGANIC ELECTRONICS
 |
| 出版日期 | 2016-09-01 |
| 卷号 | 36页码:73-81 |
| 关键词 | OFETs OMBD Solution-process Off-centre C8BTBT Morphology |
| 英文摘要 | Organic field-effect transistors (OFETs) based on organic semiconductor material 2,7-dioctyl[1] benzothieno[ 3,2-b] benzothiophene (C8BTBT) as the active layer were fabricated by using organic molecular beam deposition (OMBD) and solution-processed methods, in which the C8BTBT thin-film morphology could be well controlled. In OMBD method, C8BTBT thin-film morphology could be controlled by the thickness of organic semiconductor layer and the deposition rate, of which the high-quality C8BTBT thin film was obtained at a thickness of about 20 nm and at a deposition rate of 1.2 nm/min, resulting in an obvious mobility improvement from 2.8 x 10(-3) cm(2) V-1 s(-1) to 1.20 cm(2) V-1 s(-1). While in the solution-processing, C8BTBT thin-film morphology and thickness are related to the spin-coating speed and the substrate position in spin coater, i.e., in-centre and off-centre position. The off-centre spin-coating with an optimized speed produced large-size domain C8BTBT thin film and accordingly resulted in a mobility of 1.47 cm(2) V-1 s(-1). Furthermore, an additive polystyrene (PS) was added into C8BTBT solution could further improve the thin-film morphology with more metal-stable phase as well as improve the interface contact with the substrate SiO2, resulting in the highest mobility up to 3.56 cm(2) V-1 s(-1). The research suggested that C8BTBT-based OFETs with the mobility over 1.20 cm(2) V-1 s(-1) could be fabricated by using both OMBD and solution-processed methods through the thin-film morphology and structure optimization, which shows the potential applications in high-performance flexible and printed electronics. (C) 2016 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/35535]  |
| 专题 | 化学研究所_高分子物理与化学实验室 |
| 作者单位 | 1.Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China 2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 3.Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guilin 541004, Guangxi, Peoples R China 4.Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA |
| 推荐引用方式 GB/T 7714 | Huang, Yulan,Sun, Jia,Zhang, Jidong,et al. Controllable thin-film morphology and structure for 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8BTBT) based organic field-effect transistors[J]. ORGANIC ELECTRONICS,2016,36:73-81. |
| APA | Huang, Yulan.,Sun, Jia.,Zhang, Jidong.,Wang, Shitan.,Huang, Han.,...&Yang, Junliang.(2016).Controllable thin-film morphology and structure for 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8BTBT) based organic field-effect transistors.ORGANIC ELECTRONICS,36,73-81. |
| MLA | Huang, Yulan,et al."Controllable thin-film morphology and structure for 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8BTBT) based organic field-effect transistors".ORGANIC ELECTRONICS 36(2016):73-81. |
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来源：化学研究所
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