High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode
文献类型：期刊论文
| 作者 | Jia, Chuancheng1; Ma, Wei2,3,4; Gu, Chunhui1; Chen, Hongliang1; Yu, Haomiao5; Li, Xinxi1; Zhang, Fan2,3,4; Gu, Lin2,3,4; Xia, Andong6; Hou, Xiaoyuan5 |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2016-06-01 |
| 卷号 | 16期号:6页码:3600-3606 |
| 关键词 | Graphene photovoltaics interface electron tunnelling |
| 英文摘要 | A heterostructure photovoltaic diode featuring an all-solid-state TiO2/graphene/dye ternary interface with high-efficiency photogenerated charge separation/transport is described here. Light absorption is accomplished by dye molecules deposited on the outside surface of graphene as photoreceptors to produce photoexcited electron-hole pairs. Unlike conventional photovoltaic conversion, in this heterostructure both photoexcited electrons and holes tunnel along the same direction into graphene, but only electrons display efficient ballistic transport toward the TiO2 transport layer, thus leading to effective photon-to-electricity conversion. On the basis of this ipsilateral selective electron tunnelling (ISET) mechanism, a model monolayer photovoltaic device (PVD) possessing a TiO2/graphene/acridine orange ternary interface showed similar to 86.8% interfacial separation/collection efficiency, which guaranteed an ultrahigh absorbed photon-to-current efficiency (APCE, similar to 80%). Such an ISET-based PVD may become a fundamental device architecture for photovoltaic solar cells, photoelectric detectors, and other novel optoelectronic applications with obvious advantages, such as high efficiency, easy fabrication, scalability, and universal availability of cost-effective materials. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/35794]  |
| 专题 | 化学研究所_光化学实验室 |
| 作者单位 | 1.Peking Univ, Coll Chem & Mol Engn, State Key Lab Struct Chem Unstable & Stable Speci, Ctr Nanochem,Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 4.Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China 5.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China 6.Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China 7.Peking Univ, Dept Mat Sci & Engn, Coll Engn, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jia, Chuancheng,Ma, Wei,Gu, Chunhui,et al. High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode[J]. NANO LETTERS,2016,16(6):3600-3606. |
| APA | Jia, Chuancheng.,Ma, Wei.,Gu, Chunhui.,Chen, Hongliang.,Yu, Haomiao.,...&Guo, Xuefeng.(2016).High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode.NANO LETTERS,16(6),3600-3606. |
| MLA | Jia, Chuancheng,et al."High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode".NANO LETTERS 16.6(2016):3600-3606. |
入库方式： OAI收割
来源：化学研究所
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