Nitrogen-Doped Graphdiyne Applied for Lithium-Ion Storage
文献类型：期刊论文
| 作者 | Zhang, Shengliang1,2; Du, Huiping1,2; He, Jianjiang1,2; Huang, Changshui1; Liu, Huibiao3; Cui, Guanglei1; Li, Yuliang3 |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2016-04-06 |
| 卷号 | 8期号:13页码:8467-8473 |
| 关键词 | one-atom-thick graphdiyne nitrogen-doped lithium-ion storage two-dimension-layer |
| 英文摘要 | The elemental N emerged uniformly in graphdiyne (GDY) after heat treatment under NH3 atmosphere to form N-doping GDY. The interplanar N-GDY distance decreased slightly, which may be ascribed to the smaller atom radius of N than C. Compared with GDY, the introduction of N atoms in N-GDY created numerous heteroatomic defects and active sites, thus achieving enhanced electrochemical properties, including higher reversible capacity, improved rate performance, and superior cycling stability. In addition, N-doping might be advantageous to minimize the surface side reactions and form stable interfaces, hence improving the electrochemical cycling stability of N-GDY electrodes. These results indicate N-doping is also an efficient way for improving the electrochemical performance of GDY materials. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/35993]  |
| 专题 | 化学研究所_其它 |
| 作者单位 | 1.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, 189 Songling Rd, Qingdao 266101, Peoples R China 2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Shengliang,Du, Huiping,He, Jianjiang,et al. Nitrogen-Doped Graphdiyne Applied for Lithium-Ion Storage[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(13):8467-8473. |
| APA | Zhang, Shengliang.,Du, Huiping.,He, Jianjiang.,Huang, Changshui.,Liu, Huibiao.,...&Li, Yuliang.(2016).Nitrogen-Doped Graphdiyne Applied for Lithium-Ion Storage.ACS APPLIED MATERIALS & INTERFACES,8(13),8467-8473. |
| MLA | Zhang, Shengliang,et al."Nitrogen-Doped Graphdiyne Applied for Lithium-Ion Storage".ACS APPLIED MATERIALS & INTERFACES 8.13(2016):8467-8473. |
入库方式： OAI收割
来源：化学研究所
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