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Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

文献类型：期刊论文

作者Cui, Ajuan1; Liu, Zhe2; Dong, Huanli1; Yang, Fangxu1; Zhen, Yonggang1; Li, Wuxia2; Li, Junjie2; Gu, Changzhi2; Zhang, Xiaotao3,4; Li, Rongjin3,4
刊名ADVANCED MATERIALS
出版日期2016-10-05
卷号28期号:37页码:8227-8233
关键词nanofabrication nanogap electrodes nonvolatile resistive switches
英文摘要Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and the migration of Au atoms is the mechanism behind the resistive switching.
收录类别SCI
语种英语
源URL[http://ir.iccas.ac.cn/handle/121111/35518]  
专题化学研究所_有机固体实验室
作者单位1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China
3.Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Sch Sci, Tianjin 300072, Peoples R China
4.Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China
推荐引用方式
GB/T 7714		 Cui, Ajuan,Liu, Zhe,Dong, Huanli,et al. Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory[J]. ADVANCED MATERIALS,2016,28(37):8227-8233.
APA Cui, Ajuan.,Liu, Zhe.,Dong, Huanli.,Yang, Fangxu.,Zhen, Yonggang.,...&Hu, Wenping.(2016).Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory.ADVANCED MATERIALS,28(37),8227-8233.
MLA Cui, Ajuan,et al."Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory".ADVANCED MATERIALS 28.37(2016):8227-8233.

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来源：化学研究所

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