Isomeric indacenedibenzothiophenes: synthesis, photoelectric properties and ambipolar semiconductivity
文献类型：期刊论文
| 作者 | Ren, Longbin1,2; Liu, Chunming1,2; Wang, Zhaohui1; Zhu, Xiaozhang1 |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY C
 |
| 出版日期 | 2016 |
| 卷号 | 4期号:23页码:5202-5206 |
| 英文摘要 | A new strategy via double C-H activation cyclization has been developed for the versatile synthesis of IDBT derivatives with quite different photoelectric properties. Single-crystal field-effect transistors based on IDBT-l-TIPSA delivered high and balanced charge carrier mobilities of up to 0.64 cm(2) V-1 s(-1) for holes and 0.34 cm(2) V-1 s(-1) for electrons under ambient conditions. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/35572]  |
| 专题 | 化学研究所_有机固体实验室 |
| 作者单位 | 1.Chinese Acad Sci, Inst Chem, CAS Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ren, Longbin,Liu, Chunming,Wang, Zhaohui,et al. Isomeric indacenedibenzothiophenes: synthesis, photoelectric properties and ambipolar semiconductivity[J]. JOURNAL OF MATERIALS CHEMISTRY C,2016,4(23):5202-5206. |
| APA | Ren, Longbin,Liu, Chunming,Wang, Zhaohui,&Zhu, Xiaozhang.(2016).Isomeric indacenedibenzothiophenes: synthesis, photoelectric properties and ambipolar semiconductivity.JOURNAL OF MATERIALS CHEMISTRY C,4(23),5202-5206. |
| MLA | Ren, Longbin,et al."Isomeric indacenedibenzothiophenes: synthesis, photoelectric properties and ambipolar semiconductivity".JOURNAL OF MATERIALS CHEMISTRY C 4.23(2016):5202-5206. |
入库方式： OAI收割
来源：化学研究所
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