中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-Mobility N-Type Organic Field-Effect Transistors of Rylene Compounds Fabricated by a Trace-Spin-Coating Technique

文献类型:期刊论文

作者Zhao, Guangyao1,2; Gu, Pengcheng1,3; Dong, Huanli1,3; Jiang, Wei1; Wang, Zhaohui1; Hu, Wenping1,4,5
刊名ADVANCED ELECTRONIC MATERIALS
出版日期2016-05-01
卷号2期号:5
收录类别SCI
语种英语
源URL[http://ir.iccas.ac.cn/handle/121111/35739]  
专题化学研究所_有机固体实验室
作者单位1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
3.Capital Normal Univ, Dept Chem, Beijing Key Lab Opt Mat & Photon Devices, Beijing 100037, Peoples R China
4.Tianjin Univ, Sch Chem, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
5.Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China
推荐引用方式
GB/T 7714
Zhao, Guangyao,Gu, Pengcheng,Dong, Huanli,et al. High-Mobility N-Type Organic Field-Effect Transistors of Rylene Compounds Fabricated by a Trace-Spin-Coating Technique[J]. ADVANCED ELECTRONIC MATERIALS,2016,2(5).
APA Zhao, Guangyao,Gu, Pengcheng,Dong, Huanli,Jiang, Wei,Wang, Zhaohui,&Hu, Wenping.(2016).High-Mobility N-Type Organic Field-Effect Transistors of Rylene Compounds Fabricated by a Trace-Spin-Coating Technique.ADVANCED ELECTRONIC MATERIALS,2(5).
MLA Zhao, Guangyao,et al."High-Mobility N-Type Organic Field-Effect Transistors of Rylene Compounds Fabricated by a Trace-Spin-Coating Technique".ADVANCED ELECTRONIC MATERIALS 2.5(2016).

入库方式: OAI收割

来源:化学研究所

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