Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors
文献类型：期刊论文
| 作者 | Zou, Xuming1,2; Huang, Chun-Wei3; Wang, Lifeng4; Yin, Long-Jing5; Li, Wenqing1,2; Wang, Jingli1,2; Wu, Bin4; Liu, Yunqi4; Yao, Qian6; Jiang, Changzhong1,2 |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2016-03-09 |
| 卷号 | 28期号:10页码:2062-+ |
| 英文摘要 | A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-kappa HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/35929]  |
| 专题 | 化学研究所_有机固体实验室 |
| 作者单位 | 1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China 3.Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan 4.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 5.Beijing Normal Univ, Ctr Adv Quantum Studies, Dept Phys, Beijing 100875, Peoples R China 6.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China 7.City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zou, Xuming,Huang, Chun-Wei,Wang, Lifeng,et al. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors[J]. ADVANCED MATERIALS,2016,28(10):2062-+. |
| APA | Zou, Xuming.,Huang, Chun-Wei.,Wang, Lifeng.,Yin, Long-Jing.,Li, Wenqing.,...&Liao, Lei.(2016).Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.ADVANCED MATERIALS,28(10),2062-+. |
| MLA | Zou, Xuming,et al."Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors".ADVANCED MATERIALS 28.10(2016):2062-+. |
入库方式： OAI收割
来源：化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。