Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors
文献类型：期刊论文
| 作者 | Liu, Lili1; Ren, Zhongjie1; Xiao, Chengyi2; He, Bing1; Dong, Huanli2; Yan, Shouke1; Hu, Wenping2; Wang, Zhaohui2 |
| 刊名 | CHEMICAL COMMUNICATIONS
 |
| 出版日期 | 2016 |
| 卷号 | 52期号:27页码:4902-4905 |
| 英文摘要 | Large-area highly-ordered F-NDI films were obtained by epitaxial-crystallization on highly-oriented PE substrates through vacuum deposition. An electron mobility of 0.2 cm(2) V-1 s(-1) was achieved based on such epitaxially-crystallized F-NDI films, which is 4 times higher than that of its un-oriented thin film devices. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/35952]  |
| 专题 | 化学研究所_有机固体实验室 |
| 作者单位 | 1.Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China 2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Lili,Ren, Zhongjie,Xiao, Chengyi,et al. Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors[J]. CHEMICAL COMMUNICATIONS,2016,52(27):4902-4905. |
| APA | Liu, Lili.,Ren, Zhongjie.,Xiao, Chengyi.,He, Bing.,Dong, Huanli.,...&Wang, Zhaohui.(2016).Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors.CHEMICAL COMMUNICATIONS,52(27),4902-4905. |
| MLA | Liu, Lili,et al."Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors".CHEMICAL COMMUNICATIONS 52.27(2016):4902-4905. |
入库方式： OAI收割
来源：化学研究所
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