High mobility organic semiconductors for field-effect transistors
文献类型：期刊论文
| 作者 | Gao XK(高希珂); Zhao Z(赵征) |
| 刊名 | Sci. China-Chem.
 |
| 出版日期 | 2015 |
| 卷号 | 58期号:6页码:947-968 |
| 其他题名 | 用于场效应晶体管的高迁移率有机半导体 |
| 通讯作者 | 高希珂 |
| 英文摘要 | Organic field-effect transistors (OFETs) are attracting more and more attention due to their potential applications in low-cost, large-area and flexible electronic products. Organic semiconductors (OSCs) are the key components of OFETs and basically determine the device performance. The past five years have witnessed great progress of OSCs. OSCs used for OFETs have made rapid progress, with field-effect mobility much larger than that of amorphous silicon (0.5-1.0 cm(2)/(V s)) and of up to 10 cm(2)/(V s) or even higher. In this review, we demonstrate the latest progress of OSCs for OFETs, where more than 50 representative OSCs are highlighted and analyzed to give some valuable insights for this important but challenging field. |
| 学科主题 | 高分子化学 |
| 收录类别 | SCI |
| 原文出处 | http://dx.doi.org/10.1007/s11426-015-5399-5 |
| 语种 | 英语 |
| WOS记录号 | WOS:000355266100006 |
| 源URL | [http://ir.sioc.ac.cn/handle/331003/39844]  |
| 专题 | 上海有机化学研究所_高分子材料研究室 |
| 作者单位 | 中科院上海有机化学研究所, 有机功能分子合成与组装化学重点实验室 |
| 推荐引用方式 GB/T 7714 | Gao XK,Zhao Z. High mobility organic semiconductors for field-effect transistors[J]. Sci. China-Chem.,2015,58(6):947-968. |
| APA | 高希珂,&赵征.(2015).High mobility organic semiconductors for field-effect transistors.Sci. China-Chem.,58(6),947-968. |
| MLA | 高希珂,et al."High mobility organic semiconductors for field-effect transistors".Sci. China-Chem. 58.6(2015):947-968. |
入库方式： OAI收割
来源：上海有机化学研究所
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