中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Measurement of excited layer thickness in highly photo-excited GaAs

文献类型:会议论文

作者Liang, Lingliang1,2,3; Tian, Jinshou1; Wang, Tao1; Wu, Shengli3; Li, Fuli1; Gao, Guilong1,2,3
出版日期2016
会议名称international symposium on optical measurement technology and instrumentation
会议日期2016-05-09
会议地点beijing, china
关键词Gallium arsenide Optical data processing Optical variables measurement Probes Semiconducting gallium
卷号10155
通讯作者liang, lingliang (lianglingliang@opt.cn)
英文摘要

highly photo-excited layer thickness in gaas is measured using a pump probe arrangement. a normally incident pump illumination spatially modulated by a mask will induce a corresponding refractive index change distribution in the depth direction due to edge scattering and attenuation absorption effect, which can deflect the probe beam passing through this excited region. maximum deflection of the probe beam will be limited by the thickness of excited layer, and thus can also be employed to measure the thickness of the photo-excited layer of the material. theoretical calculation confirms the experimental results. this method can find its application in measurements of photo-excited layer thickness of many kinds of materials and be significant to study the characteristics of materials in laser machining, grating and waveguide fabricating. © 2016 spie.

收录类别EI ; ISTP
产权排序1
会议录optical measurement technology and instrumentation
会议录出版者spie
学科主题single element semiconducting materials ; data processing and image processing ; light/optics ; chemical products generally ; optical variables measurements
语种英语
ISSN号0277786x
ISBN号9781510607682
源URL[http://ir.opt.ac.cn/handle/181661/28593]  
专题条纹相机工程中心
作者单位1.Xi'an Institute of Optics and Precision Mechanics of Chinese Academy of Science, State Key Laboratory of Transient Optics and Photonics, No.17 Xinxi Road, Xi'an; 710119, China
2.Graduate University of Chinese, Academy of Sciences, No.19 Yuquan Road, Beijing; 100049, China
3.Xi'an Jiaotong University, No.28 Xianning Road, Xi'an; 710049, China
推荐引用方式
GB/T 7714
Liang, Lingliang,Tian, Jinshou,Wang, Tao,et al. Measurement of excited layer thickness in highly photo-excited GaAs[C]. 见:international symposium on optical measurement technology and instrumentation. beijing, china. 2016-05-09.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。