n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE
文献类型：期刊论文
| 作者 | Wang, Minhuan1; Bian, Jiming1,2; Sun, Hongjun1; Liu, Weifeng1; Zhang, Yuzhi; Luo, Yingmin1 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2016-12-15 |
| 卷号 | 389页码:199-204 |
| 关键词 | Vanadium oxide p-GaN Molecular beam epitaxy Phase transition |
| 英文摘要 | High quality VO2 films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). Results indicated that a distinct reversible semiconductor-to metal (SMT) phase transition was observed for all the samples in the temperature dependent electrical resistance measurement, and the influence of VO2 layer thickness on the SMT properties of the as-grown n-VO2/p-GaN based nitride-oxide heterostructure was investigated. Meanwhile, the clear rectifying transport characteristics originated from the n-VO2/p-GaN interface were demonstrated before and after SMT of the VO2 over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Moreover, the X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO2 films was principally composed of V4+ with trace amount of V5+. The design and modulation of the n-VO2/p-GaN based heterostructure devices will benefit significantly from these achievements. (C) 2016 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 研究领域[WOS] | Chemistry ; Materials Science ; Physics |
| 关键词[WOS] | METAL-INSULATOR-TRANSITION ; PHASE-TRANSITION ; FILMS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000384577600024 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/22042]  |
| 专题 | 上海硅酸盐研究所_特种无机涂层重点实验室_期刊论文 |
| 作者单位 | 1.Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China 2.Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Minhuan,Bian, Jiming,Sun, Hongjun,et al. n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE[J]. APPLIED SURFACE SCIENCE,2016,389:199-204. |
| APA | Wang, Minhuan,Bian, Jiming,Sun, Hongjun,Liu, Weifeng,Zhang, Yuzhi,&Luo, Yingmin.(2016).n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE.APPLIED SURFACE SCIENCE,389,199-204. |
| MLA | Wang, Minhuan,et al."n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE".APPLIED SURFACE SCIENCE 389(2016):199-204. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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