中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Thermal kinetic analysis of metal-insulator transition mechanism in W-doped VO2

文献类型:期刊论文

作者Zhang, Heng1,2; Yu, Huimei2; Chen, Zhang1; Luo, Hongjie1,2; Gao, Yanfeng1,2
刊名JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
出版日期2016-11-01
卷号126期号:2页码:949-957
关键词Vanadium dioxide Phase transition Isoconversional kinetic analysis Free energy barrier
英文摘要

Tungsten (W) doping can decrease the phase transition temperature of VO2, but underlining reasons are not clear. In this study, differential scanning calorimetry was employed to investigate the kinetics of the solid-solid transition in hydrothermal-synthesized W (X = 0.50, 1.09, 2.58 and 3.81 %)-doped VO2 nanoparticles. We firstly revealed the W-doping mechanism by combining the classical nucleation kinetics model with isoconversional kinetic analysis and applied them on the solid-solid transition taking place in doping. The experimentally observed large lag in the cooling stage and asymmetry effects of the decreasing temperature on insulator-metal transition and metal-insulator transition can be rationally explained. In the heating stage, W doping decreases free energy barrier (Delta G*) for homogenous nucleation and reduces geometrical factor (f(Iy)) and both factors promote the transition and thus lower the phase transition temperature quickly. However, in cooling stage, the free energy barrier (Delta G (het) (*) ) for heterogeneous nucleation was much larger than that of heating stage due to lacking of proper nucleation sites. The effect of decreasing geometrical factor was accompanied with the effect of increasing free energy barrier for homogenous nucleation by doping W. Such a competition mechanism slows down the trend of reducing temperature. It is important to unravel interaction mechanisms of doped W on different VO2 phases, which is helpful to further tailor kinetic properties of VO2 phase transition.

WOS标题词Science & Technology ; Physical Sciences
类目[WOS]Thermodynamics ; Chemistry, Analytical ; Chemistry, Physical
研究领域[WOS]Thermodynamics ; Chemistry
关键词[WOS]PHASE-TRANSITION ; OPTICAL-PROPERTIES ; TEMPERATURE ; FILMS ; NANOPARTICLES ; NANOSTRUCTURES ; SPECTROSCOPY ; NANOWIRES ; PROPERTY ; VOLTAGE
收录类别SCI
语种英语
WOS记录号WOS:000385246400061
源URL[http://ir.sic.ac.cn/handle/331005/22057]  
专题上海硅酸盐研究所_无机材料分析测试中心_期刊论文
作者单位1.Shanghai Univ, Sch Mat Sci & Engn, 99 Shangda Rd, Shanghai 200444, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Heng,Yu, Huimei,Chen, Zhang,et al. Thermal kinetic analysis of metal-insulator transition mechanism in W-doped VO2[J]. JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY,2016,126(2):949-957.
APA Zhang, Heng,Yu, Huimei,Chen, Zhang,Luo, Hongjie,&Gao, Yanfeng.(2016).Thermal kinetic analysis of metal-insulator transition mechanism in W-doped VO2.JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY,126(2),949-957.
MLA Zhang, Heng,et al."Thermal kinetic analysis of metal-insulator transition mechanism in W-doped VO2".JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY 126.2(2016):949-957.

入库方式: OAI收割

来源:上海硅酸盐研究所

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