Defect engineering for a markedly increased electrical conductivity and power factor in doped ZnO ceramic
文献类型：期刊论文
| 作者 | Tian, Tian1,4; Cheng, Lihong1; Zheng, Liaoying1; Xing, Juanjuan2; Gu, Hui2; Bernik, Slavko3; Zeng, Huarong1; Ruan, Wei1; Zhao, Kunyu1; Li, Guorong1 |
| 刊名 | ACTA MATERIALIA
 |
| 出版日期 | 2016-10-15 |
| 卷号 | 119页码:136-144 |
| 关键词 | Thermoelectric Zinc oxide Microstructure Grain boundary Electrical conductivity |
| 英文摘要 | ZnO is a promising thermoelectric material for high-temperature applications; however, the strong correlation between the electrical and thermal transport properties has limited their simultaneous optimization to achieve superior thermoelectric performance. In this work, defect engineering was applied to solve this problem. The results revealed that by eliminating the intrinsic acceptor defects at the grain boundaries, the Schottky barrier disappeared, which led to a huge increase in the Hall mobility. Meanwhile, an increased solid solution of the trivalent dopant Al was achieved to increase the carrier concentration. The increased Hall mobility and carrier concentration gave rise to a maximum electrical conductivity (sigma(310K)) of 1.9 x 10(5) S m(-1), showing a metallic-like behavior. Owing to the ultrahigh sigma with moderate Seebeck coefficient, a maximum power factor of 8.2 x 10(-4) W m(-1) K-2 was obtained at 980 K. Moreover, by introducing large numbers of lattice defects in the grains, the lattice thermal conductivity was simultaneously decreased. Therefore, the multiple-doped ZnO ceramic with defect engineering of both grains and grain boundaries optimized the electrical and thermal transport properties in a relatively independent way which provided a new and effective route to optimize the performance of the ZnO-based thermoelectric materials. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| WOS标题词 | Science & Technology ; Technology |
| 类目[WOS] | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 研究领域[WOS] | Materials Science ; Metallurgy & Metallurgical Engineering |
| 关键词[WOS] | ENHANCED THERMOELECTRIC PROPERTIES ; GRAIN-BOUNDARY ; AL ; FILMS ; PERFORMANCE ; (ZN1-YMGY)(1-X)ALXO ; VARISTOR ; OXYGEN ; MERIT ; TIO2 |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000384778300013 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/22005]  |
| 专题 | 上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China 2.Shanghai Univ, Mat Genome Inst, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China 3.Jozef Stefan Inst, Dept Nanostruct Mat, SI-1000 Ljubljana, Slovenia 4.Univ Chinese Acad Sci, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tian, Tian,Cheng, Lihong,Zheng, Liaoying,et al. Defect engineering for a markedly increased electrical conductivity and power factor in doped ZnO ceramic[J]. ACTA MATERIALIA,2016,119:136-144. |
| APA | Tian, Tian.,Cheng, Lihong.,Zheng, Liaoying.,Xing, Juanjuan.,Gu, Hui.,...&Li, Guorong.(2016).Defect engineering for a markedly increased electrical conductivity and power factor in doped ZnO ceramic.ACTA MATERIALIA,119,136-144. |
| MLA | Tian, Tian,et al."Defect engineering for a markedly increased electrical conductivity and power factor in doped ZnO ceramic".ACTA MATERIALIA 119(2016):136-144. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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