Growth and properties of 4-in. diameter ferroelectric single crystal Pb (In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 by the seed-induced modified Bridgman technique
文献类型：期刊论文
| 作者 | Wang, Xian; Lin, Di; Wang, Sheng; Chen, Jianwei; Xu, Haiqing; Li, Xiaobing; Zhao, Xiangyong; Luo, Haosu |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2016-10-15 |
| 卷号 | 452页码:105-110 |
| 关键词 | Charaterization Homogeneity Bridgman technique Single crystal growth Perovskite Dielectric, Piezoelectric, Ferroelectric materials |
| 英文摘要 | Growth and quality of single crystals are unusually sensitive to the thermal distribution. In the appropriate thermal field ferroelectric single crystal 23Pb(In1/2Nb1/2)O-3-44Pb(Mg1/3Nb2/3)O-3-33PbTiO(3) (abbr. PIN-PMN-PT, or PIMNT), with 105 mm in diameter and 150 mm in length, is successfully grown by the modified Bridgman technique. This as-grown crystal shows excellent properties (k(33)similar to 0.92, d(33)similar to 2200 pC/N, E-c similar to 5.7 kV/cm, T-c similar to 185 degrees C, T-r/t similar to 120 degrees C; k(t)similar to 0.60) near morphotropic phase boundary. In order to suppress the compositional segregation and improve the crystal quality, the controllable orientation growth for specific applications is performed successfully using the same oriented seed. For magnetoelectric applications as-grown < 110 > oriented PIN-PMN-PT crystal demonstrates its high homogeneity (Delta epsilon < +/- 6%, Delta tan delta < +/- 14%, Delta T-r/t < +/- 3%, Delta T-c < +/- 3% and Delta k(t) < +/- 2% in a Phi 80 mm transverse wafer). These results of single crystal PIN-PMN-PT will greatly meet demands of its devices and promote its applications in the future. (C) 2016 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 关键词[WOS] | PIEZOELECTRIC PROPERTIES ; PB(IN1/2NB1/2)O-3-PB(MG1/3NB2/3)O-3-PBTIO3 |
| 收录类别 | SCI ; ISTP |
| 语种 | 英语 |
| WOS记录号 | WOS:000386414100022 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/22073]  |
| 专题 | 上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文 |
| 作者单位 | Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Xian,Lin, Di,Wang, Sheng,et al. Growth and properties of 4-in. diameter ferroelectric single crystal Pb (In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 by the seed-induced modified Bridgman technique[J]. JOURNAL OF CRYSTAL GROWTH,2016,452:105-110. |
| APA | Wang, Xian.,Lin, Di.,Wang, Sheng.,Chen, Jianwei.,Xu, Haiqing.,...&Luo, Haosu.(2016).Growth and properties of 4-in. diameter ferroelectric single crystal Pb (In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 by the seed-induced modified Bridgman technique.JOURNAL OF CRYSTAL GROWTH,452,105-110. |
| MLA | Wang, Xian,et al."Growth and properties of 4-in. diameter ferroelectric single crystal Pb (In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 by the seed-induced modified Bridgman technique".JOURNAL OF CRYSTAL GROWTH 452(2016):105-110. |
入库方式： OAI收割
来源：上海硅酸盐研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。