Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN
文献类型：期刊论文
| 作者 | Guohua Zhong; Kang Zhang; Fan He; Xuhang Ma; Lanlan Lu; Zhuang Liu; Chunlei Yang |
| 刊名 | Physica B
 |
| 出版日期 | 2012 |
| 英文摘要 | Because oftheirpossibleapplicationsinspintronicandoptoelectronicdevices,GaNdilutemagnetic semiconductors(DMSs)dopedbyrare-earth(RE)elementshaveattractedmuchattentionsincethe high CurietemperaturewasobtainedinRE-dopedGaNDMSsandacolossalmagneticmomentwas observedintheGd-dopedGaNthinfilm.WehavesystemicallystudiedtheGaNDMSsdopedbyRE elements(La,Ce–Yb)usingthefull-potentiallinearizedaugmentedplanewavemethodwithinthe frameworkofdensityfunctionaltheoryandaddingtheconsiderationsoftheelectroniccorrelationand the spin-orbitalcouplingeffects.WehavestudiedtheelectronicstructuresofDMSs,especiallyforthe contributionfromfelectrons.Theoriginofmagnetism,magneticinteractionandthepossible mechanismofthecolossalmagneticmomentwereexplored.Wefoundthat,formaterialscontaining f electrons,electroniccorrelationwasusuallystrongandthespin–orbitalcouplingwassometimes crucial indeterminingthemagneticgroundstate.ItwasfoundthatGaNdopedbyLawasnon- magnetic.GaNdopedbyCe,Nd,Pm,Eu,Gd,TbandTmarestabilizedatantiferromagneticphase,while GaN dopedbyotherREelementsshowstrongferromagnetismwhichissuitablematerialsforspintronic devices. Moreover,wehaveidentifiedthattheobservedlargeenhancementofmagneticmomentin GaN ismainlycausedbyGavacancies(3.0mB perGavacancy),insteadofthespinpolarizationby magneticionsororiginatingfromNvacancies.Variousdefects,suchassubstitutionalMgforGa,OforN under theREdopingwerefoundtobringareductionofferromagnetism.Inaddition,intermediate bandswereobservedinsomesystemsofGaN:REandGaNwithintrinsicdefects,whichpossiblyopens the potentialapplicationofRE-dopedsemiconductorsinthethirdgenerationhighefficiencyphoto- voltaicdevices. |
| 收录类别 | SCI |
| 原文出处 | http://www.sciencedirect.com/science/article/pii/S0921452612009787 |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/3690]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | Physica B |
| 推荐引用方式 GB/T 7714 | Guohua Zhong,Kang Zhang,Fan He,et al. Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN[J]. Physica B,2012. |
| APA | Guohua Zhong.,Kang Zhang.,Fan He.,Xuhang Ma.,Lanlan Lu.,...&Chunlei Yang.(2012).Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN.Physica B. |
| MLA | Guohua Zhong,et al."Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN".Physica B (2012). |
入库方式： OAI收割
来源：深圳先进技术研究院
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