ZnO film with ultra-low background electron concentration grown by plasmaassisted MBE using Mg film as the buffer layer
文献类型：期刊论文
| 作者 | Mingming Chen; Quanlin Zhang; Longxing Su; Yuquan Su; Jiashi Cao; Yuan Zhu; Tianzhun Wu; Xuchun Gui; Chunlei Yang; Rong Xiang |
| 刊名 | MATER RES BULL
 |
| 出版日期 | 2012 |
| 英文摘要 | High quality ZnO epilayer with background electron concentration as low as 2.6 1014 cm 3 was obtained by plasma-assisted MBE on c-sapphire using a thin Mg film as the buffer layer. High-resolution XRD measurement shows a sharp (0 0 2) peak with full width at half maximum (FWHM) of only 0.0298. Photoluminescence spectroscopy presents a weak defect-related near-edge emission. A metal– semiconductor–metal (MSM) typed photodetector based on the material demonstrates a response of 43 A/W under the bias of 1 V and an ON/OFF ratio of 104. This un-doped ZnO with ultra-low background electron concentration could be a promising starting material for p-type doping. |
| 收录类别 | SCI |
| 原文出处 | http://www.sciencedirect.com/science/article/pii/S002554081200431X |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/3692]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | MATER RES BULL |
| 推荐引用方式 GB/T 7714 | Mingming Chen,Quanlin Zhang,Longxing Su,et al. ZnO film with ultra-low background electron concentration grown by plasmaassisted MBE using Mg film as the buffer layer[J]. MATER RES BULL,2012. |
| APA | Mingming Chen.,Quanlin Zhang.,Longxing Su.,Yuquan Su.,Jiashi Cao.,...&Zikang Tang.(2012).ZnO film with ultra-low background electron concentration grown by plasmaassisted MBE using Mg film as the buffer layer.MATER RES BULL. |
| MLA | Mingming Chen,et al."ZnO film with ultra-low background electron concentration grown by plasmaassisted MBE using Mg film as the buffer layer".MATER RES BULL (2012). |
入库方式： OAI收割
来源：深圳先进技术研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。