Electrical transport through a scanning tunnelling microscope tip and a heavily doped Si contact
文献类型：期刊论文
| 作者 | Xieqiu Zhang; Kedong Wang; Wenjin Chen; M. M. T. Loy; J. N. Wang; Xudong Xiao |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2013 |
| 英文摘要 | By allowing the metallic tip of a scanning tunnelling microscope to penetrate a Si(111) sample at 5 K, we found that the electrical transport through the tip and the heavily doped Si(111) contact undergoes a transition from rectifying to ohmic behavior. This transition does not occur when the tip penetrates a moderately doped Si(111). This observed ohmic behavior when the Si(111) is heavily doped is semi-quantitatively simulated only by a vanishingly small Schottky barrier height, suggesting that the Schottky barrier height can be affected by the dopingconcentration in the semiconductor. |
| 收录类别 | SCI |
| 原文出处 | http://scitation.aip.org/content/aip/journal/jap/114/1/10.1063/1.4812385 |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/4381]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | JOURNAL OF APPLIED PHYSICS |
| 推荐引用方式 GB/T 7714 | Xieqiu Zhang,Kedong Wang,Wenjin Chen,et al. Electrical transport through a scanning tunnelling microscope tip and a heavily doped Si contact[J]. JOURNAL OF APPLIED PHYSICS,2013. |
| APA | Xieqiu Zhang,Kedong Wang,Wenjin Chen,M. M. T. Loy,J. N. Wang,&Xudong Xiao.(2013).Electrical transport through a scanning tunnelling microscope tip and a heavily doped Si contact.JOURNAL OF APPLIED PHYSICS. |
| MLA | Xieqiu Zhang,et al."Electrical transport through a scanning tunnelling microscope tip and a heavily doped Si contact".JOURNAL OF APPLIED PHYSICS (2013). |
入库方式： OAI收割
来源：深圳先进技术研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。