A 1.2-V 1.76-ppm/°C low voltage CMOS band-gap reference
文献类型：期刊论文
| 作者 | Bill Ma; Fengqi Yu |
| 刊名 | Applied Mechanics and Materials
 |
| 出版日期 | 2013 |
| 英文摘要 | This paper proposes an innovative CMOS band-gap reference (BGR) topology with a curvature-compensation by using MOS transistors operating in weak inversion region. The mechanism is analyzed thoroughly and the corresponding BGR circuit has been implemented in standard CMOS 0.18u technology. The proposed BGR achieves 1.76 ppm/ °C in the range of -40 °C to 120 °C at 1.2V supply voltage. In addition, it consumes only 30uA current. |
| 收录类别 | SCI |
| 原文出处 | http://www.scientific.net/AMM.303-306.1798 |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/4396]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | Applied Mechanics and Materials |
| 推荐引用方式 GB/T 7714 | Bill Ma,Fengqi Yu. A 1.2-V 1.76-ppm/°C low voltage CMOS band-gap reference[J]. Applied Mechanics and Materials,2013. |
| APA | Bill Ma,&Fengqi Yu.(2013).A 1.2-V 1.76-ppm/°C low voltage CMOS band-gap reference.Applied Mechanics and Materials. |
| MLA | Bill Ma,et al."A 1.2-V 1.76-ppm/°C low voltage CMOS band-gap reference".Applied Mechanics and Materials (2013). |
入库方式： OAI收割
来源：深圳先进技术研究院
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